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Datasheet 2SB1116A Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | 2SB1116A | AUDIO FREQUENCY POWER AMPLIFIER MEDIUM SPEED SWITCHING Transistors 2SB1116A
|  ETC | transistor |
| 2 | 2SB1116A | PNP SILICON TRANSISTORS DATA SHEET
SILICON TRANSISTORS
2SB1116, 1116A
PNP SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING
FEATURES • Low VCE(sat)
VCE(sat) = −0.20 V TYP. (IC = −1.0 A, IB = −50 mA) • High PT in small dimension with general-purpose
PT = 0.75 W, VCEO = −50/ |  NEC | transistor |
| 3 | 2SB1116A | PNP EPITAXIAL SILICON TRANSISTOR UTC 2SB1116/A
PNP EPITAXIAL SILICON TRANSISTOR
PNP EPITAXIAL SILICON TRANSISTOR
DESCRIPTION
* Complement to 2SD1616/A
APPLICATIONS
* Audio Frequency Power Amplifier * Medium Speed Switching
1
TO-92
1: Emitter
2: Collector
3: Base
ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
PARAMETER
Collector-Base V |  Unisonic Technologies | transistor |
| 4 | 2SB1116A | PNP General Purpose Transistor 2SB1116/2SB1116A PNP General Purpose Transistor
P b Lead(Pb)-Free
3 BASE COLLECTOR 2
1 2
1 EMITTER
3
TO-92
Maximum Ratings ( TA=25℃ C unless otherwise noted)
Rating Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Continuous Symbol VCBO VCEO VEBO lC 1116 |  Weitron | transistor |
| 5 | 2SB1116A | PNP Plastic Encapsulated Transistor 2SB1116A
Elektronische Bauelemente
RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
-1 A, -80 V PNP Plastic Encapsulated Transistor
FEATURES
High Collector Power Dissipation Complementary to 2SD1616A
G H
TO-92
CLASSIFICATION OF hFE(1)
Product-Rank Range 2SB1116A-L 135~27 |  SeCoS | transistor |
| 6 | 2SB1116A | PNP Transistor JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
2SB1116/1116A TRANSISTOR (PNP)
TO-92
FEATURES · High Collector Power Dissipation . · Complementary to 2SD1616/2SD1616A
1. EMITTER 2. COLLECTOR
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
3. BASE
S |  JCST | transistor |
2SB Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | 2SB030070MLJY | 2SB030070MLJY SCHOTTKY BARRIER DIODE CHIPS 2SB030070MLJY
2SB030070MLJY SCHOTTKY BARRIER DIODE CHIPS
DESCRIPTION
Ø 2SB030070MLJY is a schottky barrier diode chips fabricated in silicon epitaxial planar technology; Ø Ø Ø Ø Ø Low power losses, high efficiency; Guard ring construction for transient protection; High ESD capability; High sur  Silan Microelectronics transistor | | |
| 2 | 2SB035030MLJY | 2SB035030MLJY SCHOTTKY BARRIER DIODE CHIPS 2SB035030MLJY
2SB035030MLJY SCHOTTKY BARRIER DIODE CHIPS
DESCRIPTION
Ø 2SB035030MLJY is a schottky barrier diode chips
Lb La
fabricated in silicon epitaxial planar technology; Ø Ø Ø Ø Ø Low power losses, high efficiency; Guard ring construction for transient protection; High ESD capability; H Silan Microelectronics transistor | | |
| 3 | 2SB035100ML | 2SB035100ML SCHOTTKY BARRIER DIODE CHIPS 2SB035100ML
2SB035100ML SCHOTTKY BARRIER DIODE CHIPS
DESCRIPTION
Ø 2SB035100ML is a schottky barrier diode chips
Lb La
fabricated in silicon epitaxial planar technology; Ø Ø Ø Ø Ø Low power losses, high efficiency; Guard ring construction for transient protection; High ESD capability; High su Silan Microelectronics transistor | | |
| 4 | 2SB0709A | Transistor, Silicon PNP Epitaxial Type Transistors
2SB0709A (2SB709A)
Silicon PNP epitaxial planar type
For general amplification Complementary to 2SD0601A (2SD601A) ■ Features
• High forward current transfer ratio hFE • Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and th  Panasonic Semiconductor transistor | | |
| 5 | 2SB0710 | Transistor, Silicon PNP Epitaxial Type Transistors
2SB0710, 2SB0710A
Silicon PNP epitaxial planer type
Unit: mm
For general amplification Complementary to 2SD0602 and 2SD0602A I Features
• Large collector current IC • Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the ma Panasonic Semiconductor transistor | | |
| 6 | 2SB0710A | Transistor, Silicon PNP Epitaxial Type Transistors
2SB0710, 2SB0710A
Silicon PNP epitaxial planer type
Unit: mm
For general amplification Complementary to 2SD0602 and 2SD0602A I Features
• Large collector current IC • Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the ma Panasonic Semiconductor transistor | | |
| 7 | 2SB0766 | Silicon PNP epitaxial planer type(For low-frequency output amplification) Transistor
2SB766, 2SB766A
Silicon PNP epitaxial planer type
For low-frequency output amplification Complementary to 2SD874 and 2SD874A
Unit: mm
s Features
q q
2.6±0.1
0.4max.
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to 2SB766 2SB766A 2SB766 VCEO VEBO ICP IC PC* Panasonic Semiconductor transistor | | |
| 8 | 2SB0766A | Silicon PNP epitaxial planer type(For low-frequency output amplification) Transistor
2SB766, 2SB766A
Silicon PNP epitaxial planer type
For low-frequency output amplification Complementary to 2SD874 and 2SD874A
Unit: mm
s Features
q q
2.6±0.1
0.4max.
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to 2SB766 2SB766A 2SB766 VCEO VEBO ICP IC PC* Panasonic Semiconductor transistor | | |
| 9 | 2SB0819 | For Low-Frequency Output Amplification
Transistors
2SB0819 (2SB819)
Silicon PNP epitaxial planar type
For low-frequency output amplification Complementary to 2SD1051
(0.4)
Unit: mm
6.9±0.1 (1.5) (1.5)
3.5±0.1
2.5±0.1 (1.0)
(1.0) 2.0±0.2 2.4±0.2
1.0±0.1
Parameter Collector-base voltage (Emitter open) Collec Panasonic Semiconductor transistor | |
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