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PDF 2SB1073 Data sheet ( Hoja de datos )
| Número de pieza | 2SB1073 | |
| Descripción | Silicon PNP epitaxial planer type(For low-frequency amplification) | |
| Fabricantes | Panasonic Semiconductor | |
| Logotipo |  |
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Transistor
2SB1073
Silicon PNP epitaxial planer type
For low-frequency amplification
Unit: mm
s Features
q Low collector to emitter saturation voltage VCE(sat).
q Large peak collector current ICP.
q Mini Power type package, allowing downsizing of the equipment
and automatic insertion through the tape packing and the maga-
zine packing.
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
–30
V
Collector to emitter voltage VCEO
–20
V
Emitter to base voltage
VEBO
–7
V
Peak collector current
ICP
–7 A
Collector current
IC
–4 A
Collector power dissipation PC* 1 W
Junction temperature
Tj
150 ˚C
Storage temperature
Tstg –55 ~ +150 ˚C
* Printed circuit board: Copper foil area of 1cm2 or more, and the board
thickness of 1.7mm for the collector portion
4.5±0.1
1.6±0.2
1.5±0.1
45°
0.4±0.08
0.5±0.08
1.5±0.1
3.0±0.15
321
marking
0.4±0.04
1:Base
2:Collector
3:Emitter
EIAJ:SC–62
Mini Power Type Package
Marking symbol : I
s Electrical Characteristics (Ta=25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Collector cutoff current
Emitter cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
ICBO
IEBO
VCBO
VCEO
VEBO
hFE*1
VCE(sat)
fT
Cob
VCB = –30V, IE = 0
–100 nA
VEB = –7V, IC = 0
–100 nA
IC = –10µA, IE = 0
–30
V
IC = –1mA, IB = 0
–20
V
IE = –10µA, IC = 0
–7
V
VCE = –2V, IC = –2A*2
120 315
IC = –3A, IB = –0.1A*2
– 0.6 –1
V
VCB = –6V, IE = 50mA, f = 200MHz 120 MHz
VCB = –20V, IE = 0, f = 1MHz
40 pF
*2 Pulse measurement
*1hFE Rank classification
Rank
QR
hFE
Marking Symbol
120 ~ 205 180 ~ 315
IQ IR
1
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet 2SB1073.PDF ] | |
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