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Número de pieza | LS313 | |
Descripción | Ultra Match | |
Fabricantes | Micross | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de LS313 (archivo pdf) en la parte inferior de esta página. Total 1 Páginas | ||
No Preview Available ! LS313
MONOLITHIC DUAL
NPN TRANSISTOR
Linear Systems High Voltage Super-Beta Monolithic Dual NPN
The LS313 is a monolithic pair of NPN transistors
mounted in a single SOIC package. The monolithic dual
chip design reduces parasitics and gives better
performance while ensuring extremely tight matching.
The 8 Pin SOIC provides ease of manufacturing, and
the symmetrical pinout prevents improper orientation.
FEATURES
HIGH GAIN
TIGHT VBE MATCHING
HIGH ft
ABSOLUTE MAXIMUM RATINGS 1
@ 25°C (unless otherwise noted)
hFE ≥ 400 @ 10µA‐1mA
|VBE1 – VBE2 |= 0.2mV TYP.
250MHz TYP. @ 1mA
(See Packaging Information).
Maximum Temperatures
Storage Temperature
‐65°C to +200°C
Operating Junction Temperature
‐55°C to +150°C
LS313 Features:
Maximum Power Dissipation
Continuous Power Dissipation (One side)
250mW
Very high gain
Tight matching
Low Output Capacitance
Continuous Power Dissipation (Both sides)
Linear Derating factor (One side)
Linear Derating factor (Both sides)
500mW
2.3mW/°C
4.3mW/°C
Maximum Currents
Collector Current
10mA
MATCHING CHARACTERISTICS @ 25°C (unless otherwise stated)
SYMBOL
CHARACTERISTIC
MIN TYP MAX UNITS CONDITIONS
|VBE1 – VBE2 |
Base Emitter Voltage Differential
‐‐ 0.4
1
mV
IC = 10µA, VCE = 5V
∆|(VBE1 – VBE2)| / ∆T
|IB1 – IB2 |
Base Emitter Voltage Differential
Change with Temperature
Base Current Differential
‐‐ 1
5 µV/°C
IC = 10µA, VCE = 5V
TA = ‐55°C to +125°C
‐‐ 1.25
5
nA
IC = 10µA, VCE = 5V
|∆ (IB1 – IB2)|/°C
Base Current Differential
Change with Temperature
hFE1 /hFE2
DC Current Gain Differential
ClickELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
To‐‐ ‐‐
‐‐ 5
Buy0.5 nA/°C
‐‐ %
IC = 10µA, VCE = 5V
TA = ‐55°C to +125°C
IC = 10µA, VCE = 5V
SYMBOL
CHARACTERISTICS
MIN.
TYP.
MAX. UNITS
CONDITIONS
BVCBO
BVCEO
BVEBO
BVCCO
hFE
Collector to Base Voltage
45 ‐‐ ‐‐ V
Collector to Emitter Voltage
45 ‐‐ ‐‐ V
Emitter‐Base Breakdown Voltage 6.2 ‐‐ ‐‐ V
Collector to Collector Voltage
100 ‐‐
‐‐
V
400 ‐‐ 1000
DC Current Gain
400 ‐‐
‐‐
IC = 10µA, IE = 0
IC = 10µA, IB = 0
IE = 10µA, IC = 02
IC = 10µA, IE = 0
IC = 10µA, VCE = 5V
IC = 100µA, VCE = 5V
400 ‐‐
‐‐
IC = 1mA, VCE = 5V
VCE(SAT)
Collector Saturation Voltage
‐‐ ‐‐ 0.25 V
IC = 1mA, IB = 0.1mA
IEBO
Emitter Cutoff Current
‐‐ ‐‐ 0.2 nA
IE = 0, VCB = 3V
ICBO
Collector Cutoff Current
‐‐ ‐‐ 0.2 nA
IE = 0, VCB = 30V
COBO
Output Capacitance
‐‐ ‐‐ 2 pF
IE = 0, VCB = 5V
CC1C2
Collector to Collector Capacitance
‐‐
‐‐
2 pF
VCC = 0V
IC1C2
Collector to Collector Leakage Current
‐‐
‐‐ 0.5 nA
VCC = ±100V
fT
Current Gain Bandwidth Product 200 ‐‐
‐‐ MHz
IC = 1mA, VCE = 5V
NF
Narrow Band Noise Figure
‐‐ ‐‐ 3 dB IC = 100µA, VCE = 5V, BW=200Hz, RG= 10KΩ,
f = 1KHz
Notes:
1. Absolute Maximum ratings are limiting values above which serviceability may be impaired
2. The reverse base‐to‐emitter voltage must never exceed 6.2 volts; the reverse base‐to‐emitter current must never exceed 10µA.
SOIC (Top View)
Available Packages:
LS313 in SOIC
LS313 available as bare die
Please contact Micross for full package and die dimensions:
Email: [email protected]
Web: www.micross.com/distribution.aspx
Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or
other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems.
1 page |
Páginas | Total 1 Páginas | |
PDF Descargar | [ Datasheet LS313.PDF ] |
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