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PDF LS302 Data sheet ( Hoja de datos )
| Número de pieza | LS302 | |
| Descripción | Super Beta | |
| Fabricantes | Micross | |
| Logotipo |  |
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LS302
MONOLITHIC DUAL
NPN TRANSISTOR
Linear Systems High Voltage Super-Beta Monolithic Dual NPN
The LS302 is a monolithic pair of high voltage Super-
Beta NPN transistors mounted in a single P-DIP
FEATURES
HIGH GAIN
hFE ≥ 1000 @ 1µA TYP.
package. The monolithic dual chip design reduces
parasitics and gives better performance while ensuring
extremely tight matching.
The 8 Pin P-DIP provides ease of manufacturing, and
the symmetrical pinout prevents improper orientation.
LOW OUTPUT CAPACITANCE
TIGHT VBE MATCHING
HIGH ft
ABSOLUTE MAXIMUM RATINGS 1
@ 25°C (unless otherwise noted)
COBO ≤ 2.0pF
|VBE1 – VBE2 |= 0.2mV TYP.
100MHz
(See Packaging Information).
Maximum Temperatures
Storage Temperature
‐65°C to +200°C
Operating Junction Temperature
‐55°C to +150°C
LS302 Features:
Maximum Power Dissipation
Continuous Power Dissipation (One side)
250mW
Very high gain
Tight matching
Low Output Capacitance
Continuous Power Dissipation (Both sides)
Linear Derating factor (One side)
Linear Derating factor (Both sides)
500mW
2.3mW/°C
4.3mW/°C
Maximum Currents
Collector Current
5mA
MATCHING CHARACTERISTICS @ 25°C (unless otherwise stated)
SYMBOL
CHARACTERISTIC
MIN TYP MAX UNITS CONDITIONS
|VBE1 – VBE2 |
Base Emitter Voltage Differential
‐‐ 0.2
1
mV
IC = 10µA, VCE = 5V
∆|(VBE1 – VBE2)| / ∆T Base Emitter Voltage Differential
Change with Temperature
‐‐ 1
5 µV/°C
IC = 10µA, VCE = 5V
TA = ‐55°C to +125°C
|IB1 – IB2 |
Base Current Differential
hFE1 /hFE2
DC Current Gain Differential
ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
Click To BuySYMBOL
CHARACTERISTICS
MIN.
‐‐ 1
‐‐ 5
5
‐‐
TYP. MAX. UNITS
nA IC = 10µA, VCE = 5V
% IC = 10µA, VCE = 5V
CONDITIONS
BVCBO
Collector to Base Voltage
35 ‐‐ ‐‐ V
IC = 10µA, IE = 0
BVCEO
Collector to Emitter Voltage
35 ‐‐ ‐‐ V
BVEBO Emitter‐Base Breakdown Voltage 6.2 ‐‐ ‐‐ V
IC = 10µA, IB = 0
IE = 10µA, IC = 02
BVCCO
Collector to Collector Voltage
100 ‐‐
‐‐
V
IC = 10µA, IE = 0
‐‐ 1000 ‐‐
IC = 1µA, VCE = 5V
hFE
DC Current Gain
1000
‐‐
‐‐
IC = 10µA, VCE = 5V
‐‐ 1000 ‐‐
IC = 500µA, VCE = 5V
VCE(SAT)
Collector Saturation Voltage
‐‐ ‐‐ 0.5 V
IC = 1mA, IB = 0.1mA
IEBO
Emitter Cutoff Current
‐‐ ‐‐ 0.2 pA
IC = 0, VEB = 3V
ICBO
Collector Cutoff Current
‐‐ ‐‐ 100 pA
IE = 0, VCB = 10V
COBO
Output Capacitance
‐‐ ‐‐ 2 pF
IE = 0, VCB = 1V
CC1C2
Collector to Collector Capacitance
‐‐
‐‐
2 pF
VCC = 0V
IC1C2
Collector to Collector Leakage Current
‐‐
‐‐ 0.5 nA
VCC = ±80V
fT
Current Gain Bandwidth Product 100 ‐‐
‐‐ MHz
IC = 200µA, VCE = 5V
NF
Narrow Band Noise Figure
‐‐ ‐‐ 3 dB IC = 10µA, VCE = 3V, BW=200Hz, RG= 10KΩ,
f = 1KHz
Notes:
1. Absolute Maximum ratings are limiting values above which serviceability may be impaired
2. The reverse base‐to‐emitter voltage must never exceed 6.2 volts; the reverse base‐to‐emitter current must never exceed 10µA.
P-DIP (Top View)
Available Packages:
LS302 in P-DIP
LS302 available as bare die
Please contact Micross for full package and die dimensions:
Email: [email protected]
Web: www.micross.com/distribution.aspx
Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or
other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems.
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