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PDF IXFV15N100P Data sheet ( Hoja de datos )

Número de pieza IXFV15N100P
Descripción Polar Power MOSFET HiPerFET
Fabricantes IXYS Corporation 
Logotipo IXYS Corporation Logotipo



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No Preview Available ! IXFV15N100P Hoja de datos, Descripción, Manual

PolarTM Power MOSFET
HiPerFETTM
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
IXFH15N100P
IXFV15N100P
IXFV15N100PS
Symbol
VDSS
VDGR
VGSS
VGSM
ID25
IDM
IAR
EAS
dV/dt
PD
TJ
TJM
Tstg
TL
TSOLD
M
d
FC
Weight
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGS = 1MΩ
Continuous
Transient
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
IS IDM, VDD VDSS, TJ 150°C
TC = 25°C
Maximum Ratings
1000
1000
V
V
± 30 V
± 40 V
15 A
40 A
7.5 A
500 mJ
15
543
-55 ... +150
150
-55 ... +150
V/ns
W
°C
°C
°C
Maximum lead temperature for soldering
Plastic body for 10s
300 °C
260 °C
Mounting torque (TO-247)
1.13/10
Nm/lb.in.
Mounting force (PLUS 220)
11..65/2.5..14.6
N/lb.
TO-247
PLUS 220 types
6g
4g
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
BVDSS
VGS = 0V, ID = 1mA
VGS(th)
VDS = VGS, ID = 1mA
IGSS VGS = ± 30V, VDS = 0V
IDSS
VDS = VDSS
VGS = 0V
TJ = 125°C
RDS(on)
VGS = 10V, ID = 0.5 • ID25, Note 1
Characteristic Values
Min. Typ. Max.
1000
V
3.5 6.5 V
± 100 nA
25 μA
1.0 mA
670 760 mΩ
VDSS = 1000V
ID25 = 15A
RDS(on) 760mΩ
trr 300ns
PLUS220 (IXFV)
G
DS
D (TAB)
PLUS220SMD (IXFV_S)
G
S
TO-247 (IXFH)
D (TAB)
D (TAB)
G = Gate D = Drain
S = Source TAB = Drain
Features
z International standard packages
z Fast recovery diode
z Unclamped Inductive Switching (UIS)
rated
z Low package inductance
- easy to drive and to protect
Advantages
z Easy to mount
z Space savings
z High power density
Applications:
z Switched-mode and resonant-mode
power supplies
z DC-DC Converters
z Laser Drivers
z AC and DC motor controls
z Robotics and servo controls
w©w2w008.DIXaYStaCSOhRePeOtR4AUTI.OnNe, tAll rights reserved
DS99891A(4/08)

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