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PDF IXFT150N17T2 Data sheet ( Hoja de datos )

Número de pieza IXFT150N17T2
Descripción TrenchT2 HiperFET Power MOSFET
Fabricantes IXYS Corporation 
Logotipo IXYS Corporation Logotipo



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Advance Technical Information
TrenchT2TM HiperFETTM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
IXFH150N17T2
IXFT150N17T2
VDSS =
ID25 =
RDS(on)
trr
175V
150A
12.0mΩ
160ns
TO-247 (IXFH)
Symbol
VDSS
VDGR
VGSS
VGSM
ID25
IDM
IA
EAS
dv/dt
PD
TJ
TJM
Tstg
TL
TSOLD
Md
Weight
Test Conditions
TJ = 25°C to 175°C
TJ = 25°C to 175°C, RGS = 1MΩ
Continuous
Transient
TC = 25°C
TC = 25°C, Pulse Width Limited by TJM
TC = 25°C
TC = 25°C
IS IDM, VDD VDSS, TJ 175°C
TC = 25°C
Maximum Lead Temperature for Soldering
Plastic Body for 10s
Mounting Torque (TO-247)
TO-247
TO-268
Maximum Ratings
175
175
± 20
± 30
150
400
75
1.0
V
V
V
V
A
A
A
J
15
880
-55 ... +175
175
-55 ... +175
300
260
1.13/10
6
4
V/ns
W
°C
°C
°C
°C
°C
Nm/lb.in.
g
g
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = 250μA
VGS(th)
VDS = VGS, ID = 1mA
IGSS VGS = ± 20V, VDS = 0V
IDSS VDS = VDSS, VGS= 0V
TJ = 150°C
RDS(on)
VGS = 10V, ID = 0.5 • ID25, Note 1
Characteristic Values
Min. Typ. Max.
175 V
2.5 4.5 V
± 200 nA
10 μA
1.5 mA
9.7 12.0 mΩ
G
DS
D (Tab)
TO-268 (IXFT)
G
S
D (Tab)
G = Gate
S = Source
D = Drain
Tab = Drain
Features
z High Current Handling Capability
z Fast Intrinsic Diode
z Dynamaic dv/dt Rated
z Avalanche Rated
z Low RDS(on)
Advantages
z Easy to Mount
z Space Savings
z High Power Density
Applications
z DC-DC Converters
z Battery Chargers
z Switch-Mode and Resonant-Mode
Power Supplies
z DC Choppers
z AC Motor Drives
z Uninterruptible Power Supplies
z High Speed Power Switching
Applications
w©w2w010.DIXaYStaCSOhRePeOtR4AUTI.OnNe, tAll Rights Reserved
DS100229(01/10)

1 page




IXFT150N17T2 pdf
Fig. 13. Resistive Turn-on Rise Time
vs. Junction Temperature
24
23 RG = 1, VGS = 10V
VDS = 85V
22
21 I D = 150A
20
19
18 I D = 75A
17
16
15
14
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
500
450
400
350
300
250
200
150
100
50
0
1
Fig. 15. Resistive Turn-on Switching Times
vs. Gate Resistance
t r td(on) - - - -
TJ = 125ºC, VGS = 10V
VDS = 85V
I D = 150A
I D = 75A
23456789
RG - Ohms
80
75
70
65
60
55
50
45
40
35
30
10
Fig. 17. Resistive Turn-off Switching Times
vs. Drain Current
22 75
t f td(off) - - - -
21
RG = 1, VGS = 10V
70
VDS = 85V
20 65
19 60
18
TJ = 25ºC, 125ºC
55
17 50
16 45
15 40
30 40 50 60 70 80 90 100 110 120 130 140 150
ID - Amperes
IXFH150N17T2
IXFT150N17T2
Fig. 14. Resistive Turn-on Rise Time
vs. Drain Current
24
23 RG = 1, VGS = 10V
VDS = 85V
22
21
TJ = 125ºC
20
19
18
17
16 TJ = 25ºC
15
14
30 40 50 60 70 80 90 100 110 120 130 140 150
ID - Amperes
Fig. 16. Resistive Turn-off Switching Times
vs. Junction Temperature
38
34 t f
td(off) - - - -
RG = 1, VGS = 10V
30 VDS = 85V
75
70
65
26 I D = 150A, 75A
22
60
55
18 50
14 45
10 40
6 35
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
Fig. 18. Resistive Turn-off Switching Times
vs. Gate Resistance
600
t f td(off) - - - -
500 TJ = 125ºC, VGS = 10V
VDS = 85V
400
300
250
200
300 I D = 150A
200
100
I D = 75A
150
100
50
00
1 2 3 4 5 6 7 8 9 10
RG - Ohms
© 2010 IXYS CORPORATION, All Rights Reserved

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