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PDF IXFB110N60P3 Data sheet ( Hoja de datos )

Número de pieza IXFB110N60P3
Descripción Polar3 HiPerFET Power MOSFET
Fabricantes IXYS Corporation 
Logotipo IXYS Corporation Logotipo



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No Preview Available ! IXFB110N60P3 Hoja de datos, Descripción, Manual

Advance Technical Information
Polar3TM HiPerFETTM
Power MOSFET
IXFB110N60P3
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Rectifier
VDSS =
ID25 =
RDS(on)
trr
600V
110A
56mΩ
250ns
PLUS264TM
Symbol
VDSS
VDGR
VGSS
VGSM
ID25
IDM
IA
EAS
dv/dt
PD
TJ
TJM
Tstg
TL
TSOLD
FC
Weight
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGS = 1MΩ
Continuous
Transient
TC = 25°C
TC = 25°C, Pulse Width Limited by TJM
TC = 25°C
TC = 25°C
IS IDM, VDD VDSS, TJ 150°C
TC = 25°C
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
Mounting Force
Maximum Ratings
600
600
V
V
±30 V
±40 V
110 A
275 A
55 A
3J
35 V/ns
1890
W
-55 ... +150
150
-55 ... +150
300
°C
°C
°C
°C
260 °C
30..120/6.7..27
10
N/lb.
g
G
D
S
Tab
G = Gate
S = Source
D = Drain
Tab = Drain
Features
z Avalanche Rated
z Low Package Inductance
z Fast Intrinsic Rectifier
z Low RDS(on) and QG
Advantages
z Easy to Mount
z Space Savings
Symbol
Test Conditions
(TJ = 25°C Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = 3mA
VGS(th)
VDS = VGS, ID = 8mA
IGSS VGS = ±30V, VDS = 0V
IDSS VDS = VDSS, VGS = 0V
TJ = 125°C
RDS(on)
VGS = 10V, ID = 0.5 • IDSS, Note 1
Characteristic Values
Min. Typ. Max.
600 V
3.0 5.0 V
±200 nA
50 μA
6 mA
56 mΩ
Applications
z DC-DC Converters
z Battery Chargers
z Switch-Mode and Resonant-Mode
Power Supplies
z Uninterrupted Power Supplies
z AC Motor Drives
z High Speed Power Switching
Applications
w©w20w11.DIXaYStaCSOhRePeOtR4AUTI.OnNe, tAll Rights Reserved
DS100314(03/11)

1 page




IXFB110N60P3 pdf
IXFB110N60P3
Fig. 13. Maximum Transient Thermal Impedance
0.1
0.01
0.001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
© 2011 IXYS CORPORATION, All Rights Reserved
IXYS REF: F_110N60P3(K9)03-16-11

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