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Número de pieza | 2SK3562 | |
Descripción | Field Effect Transistor Silicon N Channel MOS Type | |
Fabricantes | Toshiba Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de 2SK3562 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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2SK3562
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI)
2SK3562
Switching Regulator Applications
Unit: mm
• Low drain-source ON resistance: RDS (ON) = 0.9Ω (typ.)
• High forward transfer admittance: |Yfs| = 5.0S (typ.)
• Low leakage current: IDSS = 100 μA (VDS = 600 V)
• Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Drain-source voltage
Drain-gate voltage (RGS = 20 kΩ)
Gate-source voltage
Drain current
DC (Note 1)
Pulse (t = 1 ms)
(Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
Symbol
VDSS
VDGR
VGSS
ID
IDP
PD
EAS
IAR
EAR
Tch
Tstg
Thermal Characteristics
Rating
600
600
±30
6
24
40
345
6
4
150
-55~150
Unit
V
V
V
A
W
mJ
A
mJ
°C
°C
1: Gate
2: Drain
3: Source
JEDEC
―
JEITA
SC-67
TOSHIBA
2-10U1B
Weight : 1.7 g (typ.)
Characteristics
Symbol
Max Unit
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Rth (ch-c)
Rth (ch-a)
3.125
62.5
°C/W
°C/W
Note 1: Ensure that the channel temperature does not exceed 150℃.
Note 2: VDD = 90 V, Tch = 25°C(initial), L = 16.8 mH, IAR = 6 A, RG = 25 Ω
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Please handle with caution.
1
2
3
1 2004-07-01
1 page DataSheet.in
2SK3562
rth – tw
10
1 Duty=0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
0.001
10μ
100μ
SINGLE PULSE
PDM
t
T
Duty = t/T
Rth (ch-c) = 3.125°C/W
1m
10m
100m
PULSE WIDTH tw (s)
1
10
SAFE OPERATING AREA
100
ID max (PULSED) *
10 ID max (CONTINUOUS) *
100 µs *
DC OPERATION
1 Tc = 25°C
1 ms *
※ SINGLE NONREPETITIVE
0.1 PULSE
Tc=25℃
CURVES MUST BE DERATED
LINEARLY WITH INCREASE IN
TEMPERATURE.
0.01
1 10
VDSS max
100
1000
DRAIN-SOURCE VOLTAGE VDS (V)
EAS – Tch
500
400
300
200
100
0
25 50
75 100 125 150
CHANNEL TEMPERATURE (INITIAL)
Tch (°C)
15 V
−15 V
BVDSS
IAR
VDD
VDS
TEST CIRCUIT
WAVE FORM
RG = 25 Ω
VDD = 90 V, L = 16.8mH
ΕAS
=
1
2
⋅L ⋅I2
⋅
⎜⎜⎝⎛
B
BVDSS
VDSS − VDD
⎟⎟⎠⎞
5 2004-07-01
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet 2SK3562.PDF ] |
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