Datasheet GT605G Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	Category
1	GT605G	6 Amp Glass Passivated Quick Connect Rectifier 6 Amp Glass Passivated Quick Connect Rectifier GT605G~ GT610G 6 Amp Glass Passivated Quick Connect Rectifier Features • • • • Package suitable for assembly Glass passivated junction High current capability Plastic package has underwriters laboratory flammability classifi	TAITRON	rectifier

GT6 Datasheet ( Hoja de datos ) - resultados coincidentes

N.º	Número de pieza	Descripción	Fabricantes	Catagory
1	GT6-1214PCF	Interface Portions and In-line Portions of the Various Units and Devices Interface Portions and In-line Portions of the Various Units and Devices GT6W Series — Shielded Cable, High-Current, Waterproof Connectors — Features Can be used at currents up to 20 A. Shield processing can be performed easily with crimping. 2003.7 F Connectors Center Termina	Hirose Electric	data
2	GT6-1214SCF	Interface Portions and In-line Portions of the Various Units and Devices Interface Portions and In-line Portions of the Various Units and Devices GT6W Series — Shielded Cable, High-Current, Waterproof Connectors — Features Can be used at currents up to 20 A. Shield processing can be performed easily with crimping. 2003.7 F Connectors Center Termina	Hirose Electric	data
3	GT605G	6 Amp Glass Passivated Quick Connect Rectifier 6 Amp Glass Passivated Quick Connect Rectifier GT605G~ GT610G 6 Amp Glass Passivated Quick Connect Rectifier Features • • • • Package suitable for assembly Glass passivated junction High current capability Plastic package has underwriters laboratory flammability classifi	TAITRON	rectifier
4	GT60J321	The 4th Generation Soft Switching Applications GT60J321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60J321 The 4th Generation Soft Switching Applications Unit: mm · · · Enhancement-mode High speed: tf = 0.30 µs (typ.) (IC = 60 A) Low saturation voltage: VCE (sat) = 1.55 V (typ.) (IC = 60 A) Maximum Ratings (Ta = 25	Toshiba	data
5	GT60J322	Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60J322 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60J322 The 4th Generation Soft Switching Applications Unit: mm • • Enhancement-mode Low saturation voltage: VCE (sat) = 1.25 V (typ.) (IC = 60 A) Maximum Ratings (Ta = 25°C) Characteristics Collector-emitter voltage	Toshiba Semiconductor	igbt
6	GT60J323	Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60J323 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60J323 Current Resonance Inverter Switching Application • • • • • • Enhancement mode type High speed : tf = 0.16 μs (typ.) (IC = 60A) Low saturation voltage: VCE (sat) = 1.9 V (typ.) (IC = 60A) FRD included bet	Toshiba Semiconductor	igbt
7	GT60J323H	Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60J323H TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60J323H Current Resonance Inverter Switching Application Induction Heating Cooking Appliances Induction Heating Appliances • • • • • • Enhancement mode type High speed : tf = 0.12 μs (typ.) (IC = 60A) Low satu	Toshiba	igbt
8	GT60M101	Insulated Gate Bipolar Transistor	ETC	transistor
9	GT60M104	N CHANNEL IGBT (HIGH POWER SWITCHING APPLICATIONS)	Toshiba Semiconductor	igbt

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Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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