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PDF TPC8118 Data sheet ( Hoja de datos )
| Número de pieza | TPC8118 | |
| Descripción | Notebook PC Applications | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de TPC8118 (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
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TPC8118
www.DataSheet4U.com
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅤ)
TPC8118
Notebook PC Applications
• Small footprint due to small and thin package
• Low drain-source ON-resistance: RDS (ON) = 5.5 mΩ (typ.)
• High forward transfer admittance: |Yfs| = 36 S (typ.)
• Low leakage current: IDSS = −10 μA (max) (VDS = −30 V)
• Enhancement mode: Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Drain-source voltage
Drain-gate voltage (RGS = 20 kΩ)
Gate-source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (t = 10 s)
(Note 2a)
Drain power dissipation (t = 10 s)
(Note 2b)
Single pulse avalanche energy
(Note 3)
Avalanche current
Repetitive avalanche energy
(Note 2a) (Note 4)
Channel temperature
Storage temperature range
VDSS
VDGR
VGSS
ID
IDP
PD
PD
EAS
IAR
EAR
Tch
Tstg
−30
−30
±20
−13
−52
1.9
1.0
110
−13
0.030
150
−55 to 150
Note 1, Note 2, Note 3 and Note 4: See the next page.
Unit
V
V
V
A
W
W
mJ
A
mJ
°C
°C
Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature,
etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba
Semiconductor Reliability Handbook (“Handling Precautions”/“Derating
Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
This transistor is an electrostatic-sensitive device. Handle with care.
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-6J1B
Weight: 0.080 g (typ.)
Circuit Configuration
8765
1234
1 2009-09-29
1 page  
RDS (ON) – Ta
30
Common source
Pulse test
20
ID = −13, −6.5, −3 A
10 VGS = −4 V
VGS = −10 V
ID = −13, −6.5, −3 A
0
−80 −40
0
40 80 120 160
Ambient temperature Ta (°C)
TPC8118
www.DataSheet4U.com
−100
−10
−10
IDR – VDS
−5
−3
−1
VGS = 0 V
−1
−0.1
0
Common source
Ta = 25°C
Pulse test
0.2 0.4 -0.6 0.8 1.0 1.2
Drain−source voltage VDS (V)
10000
Capacitance – VDS
Ciss
1000
Coss
Crss
100
Common source
VGS = 0 V
f = 1 MHz
10 Ta = 25°C
−0.1
−1
−10
Drain−source voltage VDS (V)
−100
Vth – Ta
−2.0
−1.6
−1.2
−0.8
−0.4 Common source
VDS = −10 V
ID = −1 mA
Pulse test
0
−80 −40
0
40 80 120
Ambient temperature Ta (°C)
160
2
(1)
1.6
1.2
(2)
0.8
PD – Ta
(1) Device mounted on a glass-epoxy
board(a) (Note 2a)
(2) Device mounted on a glass-epoxy
board (b)(Note 2b)
t = 10 s
0.4
0
0 40 80 120 160
Ambient temperature Ta (°C)
Dynamic input/output
characteristics
−30
VDD = −24V
Common source −30
ID = −13 A
Ta = 25°C
Pulse test
−20 VDS
−20
−12
−10
−6
0
0
−6
VDD = −24V −10
−12
VGS
20 40 60 80
Total gate charge Qg (nC)
0
100
5 2009-09-29
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet TPC8118.PDF ] | |
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