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Datasheet TK80D08K3 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | TK80D08K3 | Switching Regulator Applications TK80D08K3
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSⅣ)
TK80D08K3
Switching Regulator Applications
• • • • Low drain-source ON-resistance: RDS (ON) = 3.6 mΩ (typ.) High forward transfer admittance: |Yfs| = 200 S Low leakage current: IDSS = 10 μ |  Toshiba Semiconductor | regulator |
TK8 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | TK80A04K3L | MOSFET, Transistor TK80A04K3L
MOSFETs Silicon N-channel MOS (U-MOS)
TK80A04K3L
1. Applications
• • • Automotive Switching Voltage Regulators Motor Drivers
2. Features
(1) (2) (3) Low drain-source on-resistance: RDS(ON) = 1.9 mΩ (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 40 V) Enha Toshiba Semiconductor mosfet | | |
| 2 | TK80A08K3 | Field Effect Transistor TK80A08K3
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSⅣ)
TK80A08K3
Switching Regulator Applications
• • • • Low drain-source ON-resistance: RDS (ON) = 3.6 mΩ (typ.) High forward transfer admittance: |Yfs| = 200 S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS Toshiba Semiconductor transistor | | |
| 3 | TK80D08K3 | Switching Regulator Applications TK80D08K3
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSⅣ)
TK80D08K3
Switching Regulator Applications
• • • • Low drain-source ON-resistance: RDS (ON) = 3.6 mΩ (typ.) High forward transfer admittance: |Yfs| = 200 S Low leakage current: IDSS = 10 μ Toshiba Semiconductor regulator | | |
| 4 | TK80E06K3A | Silicon N-channel MOS TK80E06K3A
MOSFETs Silicon N-channel MOS (U-MOS )
TK80E06K3A
1. Applications
• Switching Voltage Regulators
2. Features
(1) (2) (3) Low drain-source on-resistance: RDS(ON) = 4.8 mΩ (typ.) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) Enhancement mode: Vth = 3.0 to 4.0 V (VDS = 10 V,  Toshiba data | | |
| 5 | TK80E07NE | Silicon N Channel MOS Type Field Effect Transistor TK80E07NE
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U−MOS -H)
TK80E07NE
E-Bike/UPS/Inverter
Unit: mm
Note : This product is designed for E-Bike / UPS / Inverter in China / India market.
z Low drain−source on-resistance
: RDS(ON) = 6.9 mΩ (typ.)
z Low leakage current
Toshiba transistor | | |
| 6 | TK80E08K3 | Field Effect Transistor Silicon N Channel MOS Type Target Specification
TK80E08K3
)
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U−MOS
TK80E08K3
E-Bike/UPS/Inverter
Unit: mm Low drain−source ON resistance High forward transfer admittance Low leakage current Enhancement mode : RDS (ON) = 7.5 mΩ (typ.) : |Yfs| = 135 S (typ.) : Toshiba transistor | | |
| 7 | TK80F04K3L | Silicon N-channel MOS TK80F04K3L
MOSFETs Silicon N-channel MOS (U-MOS)
TK80F04K3L
1. Applications
• • • • Automotive Switching Voltage Regulators DC-DC Converters Motor Drivers
2. Features
(1) (2) (3) Low drain-source on-resistance: RDS(ON) = 3.3 mΩ (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 µA (m Toshiba data | | |
| 8 | TK80F06K3L | Silicon N-channel MOS TK80F06K3L
MOSFETs Silicon N-channel MOS (U-MOS)
TK80F06K3L
1. Applications
• • • • Automotive Switching Voltage Regulators DC-DC Converters Motor Drivers
2. Features
(1) (2) (3) Low drain-source on-resistance: RDS(ON) = 6.2 mΩ (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 µA (m Toshiba data | | |
| 9 | TK80F08K3 | Swiching Regulator TK80F08K3
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIV)
TK80F08K3
Swiching Regulator
Unit: mm
10.0 ± 0.3 9.5 ± 0.2 1.0 ± 0.3 0.4 ± 0.1 10.0 ± 0.3
• • •
Low drain-source ON-resistance: RDS (ON) = 3.4 mΩ (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 75 V) Toshiba regulator | |
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