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PDF AWT6168 Data sheet ( Hoja de datos )
| Número de pieza | AWT6168 | |
| Descripción | GSM/GPRS/Polar EDGE Power Amplifier Module | |
| Fabricantes | ANADIGICS | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de AWT6168 (archivo pdf) en la parte inferior de esta página. Total 12 Páginas | ||
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AWT6168
GSM/GPRS/Polar EwDwGwE.DaPtaoSwheeert4AUm.copmlifier
Module with Integrated Power Control
ADVANCED PRODUCT INFORMATION - REV 0.1
FEATURES
• Internal Reference Voltage
• Integrated Power Control Scheme
• InGaP HBT Technology
• ESD Protection on All Pins (2.5 kV)
• Low profile 1.3 mm
• Small Package Outline 7 mm x 7 mm
• EGPRS Capable (class 12)
GMSK MODE
• Integrated power control (CMOS)
• +35 dBm GSM850/900 Output Power
• +33 dBm DCS/PCS Output Power
• 55 % GSM850/900 PAE
• 50 % DCS/PCS PAE
• Power control range > 50 dB
EDGE MODE
• +30.5 dBm GSM850/900 Output Power
• +29.5 dBm DCS/PCS Output Power
• 25 % GSM850/900 PAE
• 25 % DCS/PCS PAE
APPLICATIONS
• GSM850/GSM900/DCS/PCS Handsets
• Dual/Tri/Quad Band PDA
• GMSK and 8-PSK Polar Modulation
Schemes
DCS/PCS_IN
DCS/PCS
PRODUCT DESCRIPTION
This power amplifier module supports dual, tri and
quad band applications for GMSK and 8-PSK modu-
lation schemes using a polar architecture. There are
two amplifier chains, one to support GSM850/900
bands, the other for DCS/PCS bands.
The module includes an internal reference voltage
and integrated power control scheme for use in both
GMSK and 8-PSK operation. This facilitates fast and
easy production calibration and reduces the num-
ber of external components required to complete a
power control function. The amplifier’s power con-
trol range is typically 55 dB, with the output power set
by applying an analog voltage to VRAMP.
All of the RF ports for this device are internally
matched to 50 Ω . Internal DC blocks are provided at
the RF inputs.
DCS/PCS_OUT
BS
TX_EN
VBATT
CEXT
VRAMP
GSM850/900_IN
Bias/Power
Control
GSM850/900
Figure 1: Block Diagram
01/2005
GSM850/900_OUT
1 page  
AWT6168
Table 7: Electrical Characteristics for GSM850/900 GMSK mode
Unless otherwise specified: VBATT = 3.5 V, PIN = 5 dBm, Pulse Width =1154 µs, Duty 25%,
ZIN = ZOUT = 50 Ω, TC = 25 °C, VRAMP = 1.6 V, BS = LOW, TX_EN = HIGwHw, MwO.DDaEta=ShLeOeWt4U.com
PARAMETER
MIN TYP MAX UNIT
COMMENTS
Operating Frequency ( Fo )
824
880
-
-
849
915
MHz
Input Power
3 5 8 dBm
Output Power, PMAX
34.5 35 - dBm Freq = 824 to 915 MHz
Degraded Output Power
32.0 32.5 -
dBm
VBATT = 3.0 V, TC = 85 °C
PIN = 3 dBm
PAE @ PMAX
- 55 -
% Freq = 824 to 915 MHz
Forward Isolation 1
Forward Isolation 2
- -37 - dBm TX_EN = LOW, PIN = 8 dBm
- -25 - dBm TX_EN = HIGH,VRAMP = 0.2V, PIN = 8 dBm
Cross Isolation
(2Fo @ DCS/PCS port)
- -25 - dBm VRAMP =0.2V to VRAMP_MAX
Second Harmonic
- -20 - dBm Over all output power levels
Third Harmonic
- -30 - dBm Over all output power levels
Stability
VSWR = 8:1 All Phases , POUT < 34.5 dBm
- - -36 dBm FOUT < 1 GHz
- - -30 dBm FOUT > 1 GHz
Ruggedness
10:1 -
-
- All Load Phases
RX Noise Power
-
-86
-
dBm
FTX = 849 MHz, RBW = 100 kHz
FRX = 869 to 894 MHz, POUT < 34.5 dBm
-
-80
-
dBm
FTX = 915 MHz, RBW = 100 kHz,
FRX = 925 to 935 MHz, POUT < 34.5 dBm
-
-86
-
dBm
FTX = 915 MHz, RBW = 100 kHz,
FRX = 935 to 960 MHz, POUT < 34.5 dBm
Input Return Loss
- - 2.5:1 VSWR Over all output power levels
ADVANCED PRODUCT INFORMATION - Rev 0.1
01/2005
5
5 Page 
NOTES
AWT6168
www.DataSheet4U.com
ADVANCED PRODUCT INFORMATION - Rev 0.1
01/2005
11
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet AWT6168.PDF ] | |
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