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PDF AOP609 Data sheet ( Hoja de datos )
| Número de pieza | AOP609 | |
| Descripción | Complementary Enhancement Mode Field Effect Transistor | |
| Fabricantes | Alpha & Omega Semiconductors | |
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AOP609
Complementary Enhancement Mode Field Effect Transistor
General Description
The AOP609 uses advanced trench technology
MOSFETs to provide excellent RDS(ON) and low
gate charge. The complementary MOSFETs
may be used in H-bridge, Inverters and other
applications. Standard Product AOP609 is Pb-
free (meets ROHS & Sony 259 specifications).
AOP609L is a Green Product ordering option.
AOP609 and AOP609L are electrically identical.
Features
n-channel
p-channel
VDS (V) = 60V
-60V
ID = 4.7A (VGS=10V) -3.5A (VGS=-10V)
RDS(ON)
RDS(ON)
< 60mΩ (VGS=10V)
< 115mΩ (VGS =-10V)
< 75mΩ (VGS=4.5V)
< 140mΩ (VGS =-4.5V)
ESD Rating: 1500V HBM 3000V HMB
S2 1 8 D2
G2 2 7 D2
S1 3 6 D1
G1 4 5 D1
PDIP-8
D2 D1
G2
S2
n-channel
G1
S1
p-channel
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Max n-channel
Drain-Source Voltage
VDS 60
Gate-Source Voltage
VGS ±20
Continuous Drain
TA=25°C
Current A
TA=70°C
Pulsed Drain Current B
ID
IDM
4.7
3.8
20
Power Dissipation
TA=25°C
TA=70°C
PD
2.5
1.6
Junction and Storage Temperature Range TJ, TSTG
-55 to 150
Thermal Characteristics: n-channel and p-channel
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
t ≤ 10s
Steady-State
Symbol
RθJA
Device
n-ch
n-ch
Maximum Junction-to-Lead C
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Steady-State
t ≤ 10s
Steady-State
RθJL
RθJA
n-ch
p-ch
p-ch
Maximum Junction-to-Lead C
Steady-State
RθJL
p-ch
Max p-channel
-60
±20
-3.5
-2.9
-20
2.5
1.6
-55 to 150
Typ Max
37 50
74 90
28 40
35 50
73 90
32 40
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
1 page  
AOP609
www.DataSheet4U.com
P-Channel Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
ID=-250µA, VGS=0V
VDS=-48V, VGS=0V
IGSS
VGS(th)
ID(ON)
RDS(ON)
gFS
VSD
IS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
Static Drain-Source On-Resistance
VDS=0V, VGS=±20V
VDS=VGS ID=-250µA
VGS=-10V, VDS=-5V
VGS=-10V, ID=-3.5A
VGS=-4.5V, ID=-2.8A
Forward Transconductance
VDS=-5V, ID=-3.5A
Diode Forward Voltage
IS=-1A,VGS=0V
Maximum Body-Diode Continuous Current
TJ=55°C
TJ=125°C
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=-30V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge (10V)
Qg(4.5V) Total Gate Charge (4.5V)
Qgs Gate Source Charge
VGS=-10V, VDS=-30V, ID=-3.5A
Qgd Gate Drain Charge
tD(on)
Turn-On DelayTime
tr Turn-On Rise Time
VGS=-10V, VDS=-30V, RL=8.1Ω,
tD(off)
Turn-Off DelayTime
RGEN=3Ω
tf Turn-Off Fall Time
trr Body Diode Reverse Recovery Time IF=-3.5A, dI/dt=100A/µs
Qrr Body Diode Reverse Recovery Charge IF=-3.5A, dI/dt=100A/µs
Min
-60
-1.5
-20
Typ Max Units
-1
-5
100
-1.8 -3
95
133
112
9
-0.77
115
140
-1
-3.5
V
µA
µA
V
A
mΩ
mΩ
S
V
A
897 1080
88
36
7.2 9
pF
pF
pF
Ω
8.1 10
3.9 5
1.4
1.7
9
7.2
35
25.5
25.8 35
28.8
nC
nC
nC
nC
ns
ns
ns
ns
ns
nC
A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C.
The value in any aggivievennaappplicliacatiotionnddeeppeennddssoonnththeeuuseser'sr'sspspeecicficficbbooaardrdddeesisgignn. .TThheecucurrrerennt traratintinggisisbbaaseseddoonnththeet≤t≤1100ssththeermrmaal l
resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The
SOA curve provides a single pulse rating.
Rev1:Aug 2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE
Alpha & Omega Semiconductor, Ltd.
5 Page | ||
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