|
|
Número de pieza | AOP607 | |
Descripción | Complementary Enhancement Mode Field Effect Transistor | |
Fabricantes | Alpha & Omega Semiconductors | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de AOP607 (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
No Preview Available ! www.DataSheet4U.com
AOP607
Complementary Enhancement Mode Field Effect Transistor
General Description
The AOP607 uses advanced trench technology
MOSFETs to provide excellent RDS(ON) and low
gate charge. The complementary MOSFETs
may be used in H-bridge, Inverters and other
applications. Standard Product AOP607 is Pb-
free (meets ROHS & Sony 259 specifications).
AOP607L is a Green Product ordering option.
AOP607 and AOP607L are electrically identical.
Features
n-channel
p-channel
VDS (V) = 60V
-60V
ID = 4.7A (VGS=10V) -3.4A (VGS=-10V)
RDS(ON)
RDS(ON)
< 56mΩ (VGS=10V)
< 105mΩ (VGS =-10V)
< 77mΩ (VGS=4.5V)
< 135mΩ (VGS =-4.5V)
S2 1 8 D2
G2 2 7 D2
S1 3 6 D1
G1 4 5 D1
PDIP-8
D2 D1
G2
S2
n-channel
G1
S1
p-channel
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Max n-channel
Drain-Source Voltage
VDS 60
Gate-Source Voltage
VGS ±20
Continuous Drain
TA=25°C
Current A
TA=70°C
Pulsed Drain Current B
ID
IDM
4.7
3.8
20
Power Dissipation
TA=25°C
TA=70°C
PD
2.5
1.6
Junction and Storage Temperature Range TJ, TSTG
-55 to 150
Thermal Characteristics: n-channel and p-channel
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
t ≤ 10s
Steady-State
Symbol
RθJA
Device
n-ch
n-ch
Maximum Junction-to-Lead C
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Steady-State
t ≤ 10s
Steady-State
RθJL
RθJA
n-ch
p-ch
p-ch
Maximum Junction-to-Lead C
Steady-State
RθJL
p-ch
Max p-channel
-60
±20
-3.4
-2.7
-20
2.5
1.6
-55 to 150
Typ Max
37 50
74 90
28 40
35 50
73 90
32 40
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
1 page AOP607
www.DataSheet4U.com
P-Channel Electrical Characteristics (T J=25°C unless otherwise noted)
Symbol
Parameter
Conditions
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
ID=-250µA, VGS=0V
VDS=-48V, VGS=0V
IGSS
VGS(th)
ID(ON)
RDS(ON)
gFS
VSD
IS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
Static Drain-Source On-Resistance
VDS=0V, VGS=±20V
VDS=VGS ID=-250µA
VGS=-10V, VDS=-5V
VGS=-10V, ID=-3.4A
VGS=-4.5V, ID=-2.7A
Forward Transconductance
VDS=-5V, ID=-3.4A
Diode Forward Voltage
IS=-1A,VGS=0V
Maximum Body-Diode Continuous Current
TJ=55°C
TJ=125°C
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=-30V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge (10V)
Qg(4.5V) Total Gate Charge (4.5V)
Qgs Gate Source Charge
Qgd Gate Drain Charge
tD(on)
Turn-On DelayTime
tr Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf Turn-Off Fall Time
trr Body Diode Reverse Recovery Time
Qrr Body Diode Reverse Recovery Charge
VGS=-10V, VDS=-30V, ID=-3.4A
VGS=-10V, VDS=-30V, RL=8.8Ω,
RGEN=3Ω
IF=-3.4A, dI/dt=100A/µs
IF=-3.4A, dI/dt=100A/µs
Min
-60
-1.5
-20
Typ Max Units
-1
-5
±100
-2.1 -3
80
130
102
10
-0.77
105
135
-1
-4
V
µA
nA
V
A
mΩ
mΩ
S
V
A
930 1120
85
35
7.2 9
pF
pF
pF
Ω
16 20
8 10
2.5
3.2
8
3.8
31.5
7.5
27 35
32
nC
nC
nC
nC
ns
ns
ns
ns
ns
nC
A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any aggivievennaappplicliacatiotionnddeeppeennddssoonnththeeuuseser'sr'sspspeecicficficbobaoradrddedseisging.n.TThehecucrurrernetntrartaintigngisisbabsaesdedononthtehet≤t≤1100ssththeermrmaal rleresissitsatannceceraratintingg. .
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA
curve provides a single pulse rating.
Rev1:Aug 2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE
Alpha & Omega Semiconductor, Ltd.
5 Page |
Páginas | Total 7 Páginas | |
PDF Descargar | [ Datasheet AOP607.PDF ] |
Número de pieza | Descripción | Fabricantes |
AOP600 | Complementary Enhancement Mode Field Effect Transistor | Alpha & Omega Semiconductors |
AOP601 | Complementary Enhancement Mode Field Effect Transistor | Alpha & Omega Semiconductors |
AOP604 | Complementary Enhancement Mode Field Effect Transistor | ETC |
AOP605 | Plastic Encapsulated Device | Alpha & Omega Semiconductors |
Número de pieza | Descripción | Fabricantes |
SLA6805M | High Voltage 3 phase Motor Driver IC. |
Sanken |
SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
Analog Devices |
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |