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PDF SPN2302A Data sheet ( Hoja de datos )

Número de pieza SPN2302A
Descripción N-Channel Enhancement Mode MOSFET
Fabricantes SYNC POWER 
Logotipo SYNC POWER Logotipo



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SPN2302A
N-Channel Enhancement Mode MOSFET
DESCRIPTION
The SPN2302A is the N-Channel logic enhancement
mode power field effect transistors are produced using
high cell density , DMOS trench technology.
This high density process is especially tailored to
minimize on-state resistance.
These devices are particularly suited for low voltage
application such as cellular phone and notebook
computer power management and other battery powered
circuits where high-side switching , and low in-line
power loss are needed in a very small outline surface
mount package.
FEATURES
‹ 20V/4.0A,RDS(ON)=75m@VGS=4.5V
‹ 20V/3.4A,RDS(ON)=95m@VGS=2.5V
‹ 20V/2.8A,RDS(ON)=135m@VGS=1.8V
‹ Super high density cell design for extremely low
RDS (ON)
‹ Exceptional on-resistance and maximum DC
current capability
‹ SOT-23-3L package design
APPLICATIONS
z Power Management in Note book
z Portable Equipment
z Battery Powered System
z DC/DC Converter
z Load Switch
z DSC
z LCD Display inverter
PIN CONFIGURATION(SOT-23-3L)
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PART MARKING
2007/06/25 Ver.1
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SPN2302A pdf
SPN2302A
N-Channel Enhancement Mode MOSFET
TYPICAL CHARACTERISTICS
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2007/06/25 Ver.1
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