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PDF STP3481 Data sheet ( Hoja de datos )

Número de pieza STP3481
Descripción P Channel Enhancement Mode MOSFET
Fabricantes Stanson Technology 
Logotipo Stanson Technology Logotipo



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STP3481
P Channel Enhancement Mode MOSFET
-5.2A
DESCRIPTION
The STP3481 is the P-Channel logic enhancement mode power field effect transistors
are produced using high cell density , DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone
and notebook computer power management and other battery powered circuits, and
low in-line power loss are needed in a very small outline surface mount package.
PIN CONFIGURATION
TSOP-6P
FEATURE
z -30V/-5.2A, RDS(ON) = 55m-ohm
@VGS = -10V
z -30V/-4.2A, RDS(ON) = 75m-ohm
@VGS = -4.5V
z Super high density cell design for
extremely low RDS(ON)
z Exceptional on-resistance and maximum
DC current capability
z TSOP-6P package design
1.2.5.6.Drain 3.Gate 4.Source
PART MARKING
TSOP-6P
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Y: Year Code A: Process Code
ORDERING INFORMATION
Part Number
Package
STP3481S6RG
TSOP-6P
Process Code : A ~ Z ; a ~ z
1
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Part Marking
81YA
STP3481 2006. V1

1 page




STP3481 pdf
STP3481
P Channel Enhancement Mode MOSFET
-5.2A
TYPICAL CHARACTERICTICS (25Unless noted)
www.DataSheet4U.com
5
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
STP3481 2006. V1

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