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PDF STG8209 Data sheet ( Hoja de datos )
| Número de pieza | STG8209 | |
| Descripción | Dual N-Channel Enhancement Mode Field Effect Transistor | |
| Fabricantes | SamHop Microelectronics | |
| Logotipo |  |
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S TG8209
S amHop Microelectronics C orp.
Dec,29.2005
Dual N-C hannel E nhancement Mode Field E ffect Transistor
P R ODUC T S UMMAR Y
V DS S ID R DS (ON) ( mW ) Max
20V 6A
26 @ VGS = 4.0V
40 @ VGS = 2.5V
F E AT UR E S
S uper high dense cell design for low R DS(ON).
R ugged and reliable.
S urface Mount P ackage.
E S D P rotected.
D1/D2
S1
S1
G1
TS S OP
18
27
36
45
(TOP VIE W)
D1/D2
S2
S2
G2
D1
G1 G2
S1
D2
S2
ABS OLUTE MAXIMUM R ATINGS (TA=25 C unless otherwise noted)
P arameter
Drain-S ource Voltage
Gate-S ource Voltage
Drain C urrent-C ontinuous a
-P ulsed b
Drain-S ource Diode Forward C urrena t a
Maximum P ower Dissipation a
Operating Junction and S torage
Temperature R ange
S ymbol
VDS
VGS
ID
IDM
IS
PD
TJ, TSTG
Limit
20
12
6
24
1.7
1.5
-55 to 150
Unit
V
V
A
A
A
W
C
THE R MAL CHAR ACTE R IS TICS
Thermal R esistance, Junction-to-Ambienta
R JA
85
C /W
1
1 page  
S T G 8209www.DataSheet4U.com
900
750 C is s
600
450
300 C oss
6 C rss
150
0
V DS , Drain-to S ource Voltage (V )
F igure 9. C apacitance
600
100
60
10
T D (o ff)
Tr
Tf
T D (on)
1
V DS =10V ,ID=1A
VGS= 4 V
1 6 10 60 100 300 600
R g, G ate R es is tance (W)
F igure 11.s witching characteris tics
5
VDS =10V
4 ID=5A
3
2
1
0
0 2 4 6 8 10 12 14 16
Qg, T otal G ate C harge (nC )
F igure 10. G ate C harge
80
10 R DS(ON) Limit
1
10ms
100ms
1s
DC
0.1 VGS =4V
S ingle P ulse
0.03 TA=25 C
0.1 1
10 30 50
V DS , Drain-S ource V oltage (V )
F igure 12. Maximum S afe
O perating Area
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet STG8209.PDF ] | |
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