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PDF LX5506 Data sheet ( Hoja de datos )

Número de pieza LX5506
Descripción InGaP HBT 4.5 - 6GHz Power Amplifier
Fabricantes Microsemi Corporation 
Logotipo Microsemi Corporation Logotipo



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LX5506
TM ® InGaP HBT 4.5 – 6GHz Power Amplifier
PRODUCTION DATA SHEET
DESCRIPTION
www.datTahsheeeLtX4u5.c5o0m6 is a power amplifier
designed for the FCC Unlicensed
National Information Infrastructure
(U-NII) band, HyperLAN2 and Japan
WLAN applications in the 4.9-5.95
GHz frequency range. The PA is
implemented as a three-stage
monolithic microwave integrated
circuit (MMIC) with active bias and
complete on-chip input matching. The
device is manufactured with an
InGaP/GaAs Heterojunction Bipolar
Transistor (HBT) IC process
(MOCVD). It operates at a single
positive voltage supply of 3.3V
(nominal), with +26dBm of P1dB and
up to 23dB power gain in the 5.15 -
5.85GHz frequency range with a
simple output matching capacitor pair.
For OFDM operation (64QAM,
54Mbps), the PA provides +18dBm
linear output power with a very low
EVM (Error-Vector Magnitude) of
3%, and consumes about 190mA total
DC current. At higher supply voltage
of 5V, the same device provides
+24dBm linear OFDM output power
with 5% EVM.
The LX5506 is available in a 16-pin
3mmx3mm micro-lead package (MLP).
The compact footprint, low profile, and
excellent thermal capability of the MLP
package makes the LX5506 an ideal
solution for broadband, high-gain
power amplifier requirements for IEEE
802.11a, and HiperLAN2 portable
WLAN applications.
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
KEY FEATURES
ƒ Advanced InGaP HBT
ƒ Single-Polarity 3.3V Supply
ƒ EVM ~ 3% at Pout=18dBm for
64QAM/ 54Mbps OFDM
ƒ P1dB ~ +26dBm
ƒ Power Gain ~ 23dB at
5.25GHz for Icq ~100mA
ƒ Power Gain ~ 21dB at
5.85GHz for Icq ~100mA
ƒ Total Current ~190mA at
Pout=18dBm at 5.25GHz
ƒ ACPR ~ -50dBc at 30MHz
Offset at Pout=18dBm
ƒ Complete On-Chip Input Match
ƒ Simple Output Capacitor Match
ƒ Small Footprint: 3x3mm2
ƒ Low Profile: 0.9mm
APPLICATIONS
ƒ FCC U-NII Wireless
ƒ IEEE 802.11a
ƒ HiperLAN2
ƒ 5GHz Cordless Phone
PRODUCT HIGHLIGHT
Copyright © 2003
Rev. 1.2c, 2005-08-18
PACKAGE ORDER INFO
LQ
Plastic MLPQ
16-Pin
LX5506LQ
RoHS Compliant / Pb-free Transition DC: 0418
Note: Available in Tape & Reel. Append the letters “TR” to
the part number. (i.e. LX5506LQ-TR)
This device is classified as ESD Level 0 in accordance with
JESD22-A114-B, (HBM) testing. Appropriate ESD
procedures should be observed when handling this device.
Microsemi
Integrated Products Division
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
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LX5506 pdf
LX5506
TM ® InGaP HBT 4.5 – 6GHz Power Amplifier
PRODUCTION DATA SHEET
POWER SWEEP DATA 5.15GHZ
30
www.datasheeGPt4oauuint.com
25 Itotal
20
800
700
600
15 500
10 400
5 300
0 200
-5
-28 -23 -18 -13 -8
-3 2
7 12
PIN (dBm)
Typical Power Sweep Data at Vc = 3.3V
(VC = 3.3V, Icq = 100mA, No Heat Sink) Frequency = 5.15GHz
100
POWER SWEEP DATA 5.85GHZ
30
Pout
800
Gain
25 Itotal
700
20 600
15 500
10 400
5 300
0 200
-5
-28 -23 -18 -13
-8
-3
2
7 12
Pin (dBm)
Typical Power Sweep Data at Vc = 3.3V
(VC = 3.3V, Icq = 100mA, No Heat Sink) Frequency = 5.85GHz
100
RECOMMENDED BIAS RESISTOR
180
160
140
120
100
80
60
40
20
0
2.9 3 3.1 3.2 3.3
Available Vref (V)
Recommended Bias Resistor for Available Vref
(Adjusted R6 value for Obtaining Nominal Icq = 10mA at Vc = 3.3V)
QUIESCENT CURRENT VS VREF
300
R6=47
250 R6=180
200
Icq/ vref ~
150 0.28mA/mV
100
Icq/ vref ~
50 0.18mA/mV
0
2.5 2.6 2.7 2.8 2.9 3 3.1 3.2 3.3 3.4 3.5 3.6
Vref (V)
Quiescent Current vs. Vref
(Vc = 3.3V, Bias Resistor R6 = 47& 180)
S-PARAMETER DATA
25
20
15
10
5
0
-5
-10
-15
-20
-25
-30
-35
-40
-45
-50
5.0 5.2 5.4 5.6 5.8
Frequency (GHz)
Typical S-Parameter Data at Room Temperature
(Vc = 3.3V, R6 = 0, Vref = 2.9V. Icq = 100mA)
SMALL SIGNAL VS SUPPLY VOLTAGE
24
23.5
S21
23
22.5
22
21.5
6.0 21
3 3.1 3.2 3.3 3.4 3.5 3.6 3.7 3.8 3.9 4 4.1 4.2 4.3 4.4 4.5
Supply Voltage Vc (V)
Typical Small Signal Gain vs. Supply Voltage
(R6 = 0, Vref = 2.9V, Icq = 100mA for Vc = 3.3V, Freq = 5.25GHz)
Copyright © 2003
Rev. 1.2c, 2005-08-18
Microsemi
Integrated Products Division
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
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