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Datasheet 2SD526 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | 2SD526 | POWER TRANSISTORS(4A/80V/30W) A
A
A
|  Mospec Semiconductor | transistor |
| 2 | 2SD526 | NPN TRIPLE DIFFUSED TYPE (POWER AMPLIFIER APPLICATIONS) |  Toshiba Semiconductor | transistor |
| 3 | 2SD526 | NPN EPITAXIAL SILICON TRANSISTOR(LOW FREQUENCY POWER AMPLIFIER) 2SD526
NPN EPITAXIAL SILICON TRANSISTOR
LOW FREQUENCY POWER AMPLIFIER
TO-220
!
Complement to 2SA671
ABSOLUTE MAXIMUM RATINGS (TA=25℃)
Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base voltage Collector Current (DC) Collector Dissipation (Tc=25℃) Junction Temperat |  Wing Shing Computer Components | transistor |
| 4 | 2SD526 | SILICON POWER TRANSISTOR SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD526
www.datasheet4u.com
DESCRIPTION ·With TO-220C package ·Complement to type 2SB596 ·Good linearity of hFE APPLICATIONS ·Power amplifier applications ·Recommend for 20 25W high fidelity audio frequency amplifier |  SavantIC | transistor |
| 5 | 2SD526 | Silicon NPN Power Transistors Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD526
DESCRIPTION ¡¤With TO-220C package ¡¤Complement to type 2SB596 ¡¤Good linearity of h FE APPLICATIONS ¡¤Power amplifier applications ¡¤Recommend for 20 ¡«25W high fidelity audio frequency amplifier outpu |  Inchange Semiconductor | transistor |
2SD Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | 2SD0592A | Silicon NPN epitaxial planar type www.DataSheet4U.net
Transistors
2SD0592A (2SD592A)
Silicon NPN epitaxial planar type
For low-frequency output amplification Complementary to 2SB0621A (2SB621A) ■ Features
0.7±0.2
Unit: mm
5.0±0.2 4.0±0.2
• Large collector power dissipation PC • Low collector-emitter saturation voltage V  Panasonic Semiconductor transistor | | |
| 2 | 2SD0601 | Silicon NPN epitaxial planer type Transistor
2SD601A
Silicon NPN epitaxial planer type
For general amplification Complementary to 2SB709A
2.8 –0.3
+0.2
Unit: mm
s Features
q q q
0.65±0.15
+0.25 1.5 –0.05
0.65±0.15
High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). Mini type pac Panasonic Semiconductor transistor | | |
| 3 | 2SD0601A | Silicon NPN epitaxial planer type Transistor Transistor
2SD0601A (2SD601A)
Silicon NPN epitaxial planer type
For general amplification Complementary to 2SB0709A (2SB709A)
I Features
G High foward current transfer ratio hFE. G Low collector to emitter saturation voltage VCE(sat). G Mini type package, allowing downsizing of the equipment and
a Panasonic Semiconductor transistor | | |
| 4 | 2SD0602 | Silicon NPN epitaxial planer type Transistors
2SD0602A
Silicon NPN epitaxial planer type
Unit: mm
For general amplification Complementary to 2SB0710A I Features
• Low collector to emitter saturation voltage VCE(sat) • Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and t Panasonic Semiconductor transistor | | |
| 5 | 2SD0602A | Silicon NPN epitaxial planer type Transistors
2SD0602A
Silicon NPN epitaxial planer type
Unit: mm
For general amplification Complementary to 2SB0710A I Features
• Low collector to emitter saturation voltage VCE(sat) • Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and t Panasonic Semiconductor transistor | | |
| 6 | 2SD0638 | Silicon NPN epitaxial planar type www.DataSheet4U.net
Transistors
2SD0638 (2SD638)
Silicon NPN epitaxial planar type
For medium-power general amplification Complementary to 2SB0643 (2SB643)
(0.4)
(1.5) (1.5)
Unit: mm
6.9±0.1 2.5±0.1 (1.0)
2.0±0.2
■ Absolute Maximum Ratings Ta = 25°C
Parameter Collector-base voltage (Emitt Panasonic Semiconductor transistor | | |
| 7 | 2SD0662 | Silicon NPN epitaxial planar type www.DataSheet4U.net
Transistors
2SD0662, 2SD0662B (2SD662, 2SD662B)
Silicon NPN epitaxial planar type
For high breakdown voltage general amplification
6.9±0.1 2.5±0.1 (1.0)
Unit: mm
(0.4)
(1.5)
2.0±0.2
• High collector-emitter voltage (Base open) VCEO • High transition frequency fT • Panasonic Semiconductor transistor | | |
| 8 | 2SD0662B | Silicon NPN epitaxial planar type www.DataSheet4U.net
Transistors
2SD0662, 2SD0662B (2SD662, 2SD662B)
Silicon NPN epitaxial planar type
For high breakdown voltage general amplification
6.9±0.1 2.5±0.1 (1.0)
Unit: mm
(0.4)
(1.5)
2.0±0.2
• High collector-emitter voltage (Base open) VCEO • High transition frequency fT • Panasonic Semiconductor transistor | | |
| 9 | 2SD0814 | Silicon NPN epitaxial planer type(For high breakdown voltage low-frequency and low-noise amplification) Transistor
2SD814, 2SD814A
Silicon NPN epitaxial planer type
For high breakdown voltage low-frequency and low-noise amplification
Unit: mm
s Features
q q q
2.8 –0.3 0.65±0.15
+0.2
0.95
High collector to emitter voltage VCEO. Low noise voltage NV. Mini type package, allowing downsizing of th Panasonic Semiconductor transistor | |
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