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PDF 2SD2163 Data sheet ( Hoja de datos )

Número de pieza 2SD2163
Descripción NPN Silicon Transistor
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DATA SHEET
DARLINGTON POWER TRANSISTOR
2SD2163
NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION)
FOR LOW-FREQUENCY POWER AMPLIFIERS AND
LOW-SPEED HIGH-CURRENT SWITCHING
The 2SD2163 is a mold power transistor developed for low-
speed high-current switching. This transistor is ideal for direct
driving from the IC output of devices such as pulse motor drivers
and relay drivers of PC terminals.
FEATURES
• Mold package that does not require an insulating board or
insulation bushing
• High DC current gain due to Darlington connection
hFE = 1,000 MIN. (@IC = 10 A)
• Low collector saturation voltage:
VCE(sat) = 1.5 V MAX. (@IC = 10 A)
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Parameter
Symbol
Collector to base voltage
VCBO
Collector to emitter voltage
VCEO
Emitter to base voltage
VEBO
Collector current (DC)
IC(DC)
Collector current (pulse)
IC(pulse)*
Base current (DC)
IB(DC)
Total power dissipation
PT (Tc = 25°C)
Total power dissipation
PT (Ta = 25°C)
Junction temperature
Tj
Storage temperature
Tstg
* PW 10 ms, duty cycle 50%
Ratings
150
100
8.0
±10
±20
1.0
30
2.0
150
55 to +150
Unit
V
V
V
A
A
A
W
W
°C
°C
PACKAGE DRAWING (UNIT: mm)
Electrode Connection
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
Parameter
Symbol
Conditions
Collector cutoff current
ICBO VCB = 100 V, IE = 0
DC current gain
hFE** VCE = 2.0 V, IC = 10 A
Collector saturation voltage VCE(sat)** IC = 10 A, IB = 25 mA
Base saturation voltage
VBE(sat)** IC = 10 A, IB = 25 mA
Turn-on time
Storage time
Fall time
ton IC = 10 A, IB1 = IB2 = 25 mA
tstg RL = 5.0 , VCC 50 V
tf Refer to the test circuit.
** Pulse test PW 350 µs, duty cycle 2%
MIN.
1,000
TYP.
6,000
1.1
1.8
1.0
5.0
2.0
MAX.
10
30,000
1.5
2.0
hFE CLASSIFICATION
Marking
hFE
M
1,000 to 3,000
L
2,000 to 5,000
K
4,000 to 10,000
J
8,000 to 30,000
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Unit
µA
V
V
µs
µs
µs
Document No. D16139EJ1V0DS00 (1st edition)
Date Published April 2002 N CP(K)
Printed in Japan
©
21090928

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