(PDF) AO4449 Datasheet - P-Channel Enhancement Mode Field Effect Transistor

Número de pieza	AO4449
Descripción	P-Channel Enhancement Mode Field Effect Transistor
Fabricantes	Alpha & Omega Semiconductors
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No Preview Available ! AO4449 P-Channel Enhancement Mode Field Effect Transistor General Description The AO4449 uses advanced trench technology to www.DataSheet4pUr.ocovmide excellent RDS(ON), and ultra-low low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product AO4449 is Pb-free (meets ROHS & Sony 259 specifications). Features VDS (V) = -30V ID = -7 A (VGS = -10V) RDS(ON) < 34mΩ (VGS = -10V) RDS(ON) < 54mΩ (VGS = -4.5V) SOIC-8 Top View SD SD SD GD D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TA=25°C Current F TA=70°C Pulsed Drain Current B ID IDM TA=25°C Power Dissipation A TA=70°C PD Junction and Storage Temperature Range TJ, TSTG Maximum -30 ±20 -7 -4.6 -40 3.1 2 -55 to 150 Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C t ≤ 10s Steady-State Steady-State Symbol RθJA RθJL Typ 31 60 16 Max 40 75 24 Units V V A W °C Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd. www.aosmd.com 1 page

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PDF AO4449 Data sheet ( Hoja de datos )