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PDF AO4447 Data sheet ( Hoja de datos )
| Número de pieza | AO4447 | |
| Descripción | P-Channel Enhancement Mode Field Effect Transistor | |
| Fabricantes | Alpha & Omega Semiconductors | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de AO4447 (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
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AO4447
P-Channel Enhancement Mode Field Effect Transistor
General Description
The AO4447 uses advanced trench technology to
www.DataSheet4pUr.ocovmide excellent RDS(ON), and ultra-low low gate
charge. This device is suitable for use as a load
switch. The device is ESD protected. Standard
Product AO4447 is Pb-free (meets ROHS & Sony
259 specifications). AO4447L is a Green Product
ordering option. AO4447 and AO4447L are
electrically identical.
Features
VDS (V) = -30V
ID = -15 A (VGS = -10V)
Max RDS(ON) < 7.5mΩ (VGS = -10V)
Max RDS(ON) < 12mΩ (VGS = -4V)
ESD Rating: 4KV HBM
SOIC-8
Top View
SD
SD
SD
GD
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TA=25°C
Current A
TA=70°C
Pulsed Drain Current B
ID
IDM
TA=25°C
Power Dissipation A TA=70°C
PD
Junction and Storage Temperature Range TJ, TSTG
Maximum
-30
±20
-15
-13.6
-60
3.1
2
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJL
Typ
26
50
14
Max
40
75
24
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
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5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet AO4447.PDF ] | |
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