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PDF APT35GP120J Data sheet ( Hoja de datos )
| Número de pieza | APT35GP120J | |
| Descripción | POWER MOS 7 IGBT | |
| Fabricantes | Advanced Power Technology | |
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APT35GP120J
1200V
POWER MOS 7® IGBT
The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs.
Using Punch Through Technology this IGBT is ideal for many high frequency,
high voltage switching applications and has been optimized for high frequency
switchmode power supplies.
EE
G C SOT-227
ISOTOP®
"UL Recognized"
• Low Conduction Loss
• Low Gate Charge
• Ultrafast Tail Current shutoff
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MAXIMUM RATINGS
Symbol Parameter
• 50 kHz operation @ 800V, 14A
• 20 kHz operation @ 800V, 25A
• RBSOA rated
C
G
E
All Ratings: TC = 25°C unless otherwise specified.
APT35GP120J
UNIT
VCES
VGE
VGEM
I C1
I C2
I CM
RBSOA
PD
TJ,TSTG
TL
Collector-Emitter Voltage
Gate-Emitter Voltage
Gate-Emitter Voltage Transient
Continuous Collector Current @ TC = 25°C
Continuous Collector Current @ TC = 110°C
Pulsed Collector Current 1 @ TC = 25°C
Reverse Bias Safe Operating Area @ TJ = 150°C
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
1200
±20
±30
64
29
140
140A @ 960V
284
-55 to 150
300
Volts
Amps
Watts
°C
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN TYP MAX
BVCES
VGE(TH)
VCE(ON)
I CES
I GES
Collector-Emitter Breakdown Voltage (VGE = 0V, IC = 250µA)
Gate Threshold Voltage (VCE = VGE, IC = 1mA, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, IC = 35A, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, IC = 35A, Tj = 125°C)
Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 25°C) 2
Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 125°C) 2
Gate-Emitter Leakage Current (VGE = ±20V)
1200
3 4.5 6
3.3 3.9
3
250
2500
±100
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
UNIT
Volts
µA
nA
1 page  
TYPICAL PERFORMANCE CURVES
10,000
5,000
Cies
1,000
500
100
50
Coes
Cres
10
0 10 20 30 40 50
VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
Figure 17, Capacitance vs Collector-To-Emitter Voltage
APT35GP120J
160
140
120
100
80
60
40
20
0
0 100 200 300 400 500 600 700 800 900 1000
VCE, COLLECTOR TO EMITTER VOLTAGE
Figure 18, Reverse Bias Safe Operating Area
0.45
0.4
0.35
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0.25
0.20
0.15
0.10
0.05
0
10-5
0.9
0.7
0.5
Note:
0.3 t1
0.1
0.05 SINGLE PULSE
t2
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
10-4 10-3 10-2 10-1 1.0
RECTANGULAR PULSE DURATION (SECONDS)
Figure 19, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
10
Junction
temp. ( ”C)
RC MODEL
0.0966
0.00997F
100
50
Power
(Watts)
0.228
0.158F
Case temperature
0.116
1.958F
FIGURE 19B, TRANSIENT THERMAL IMPEDANCE MODEL
Fmax = min(fmax1, fmax 2 )
10
TJ = 125°C
TC = 75°C
D = 50 %
VCE = 800V
RG = 5 Ω
3
f max 1
=
t d (on )
0.05
+ t r + t d(off )
+
tf
fmax 2
=
Pdiss − Pcond
Eon2 + Eoff
Pdiss
=
TJ − TC
R θJC
10 20 30 40 50
IC, COLLECTOR CURRENT (A)
Figure 20, Operating Frequency vs Collector
Current
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet APT35GP120J.PDF ] | |
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