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PDF AP9962H Data sheet ( Hoja de datos )
| Número de pieza | AP9962H | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | Advanced Power Electronics | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de AP9962H (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
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Advanced Power
Electronics Corp.
AP9962H/J
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Low On-resistance
▼ Single Drive Requirement
D
www.DataS▼heetS4Uu.rcfoamce Mount Package
G
Description
S
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-
effectiveness.
The TO-252 package is universally preferred for all commercial-
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters. The through-hole version
(AP9962J) are available for low-profile applications.
BVDSS
RDS(ON)
ID
40V
20mΩ
32A
GD
S
TO-252(H)
G
DS
TO-251(J)
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TA=25℃
ID@TA=100℃
IDM
PD@TA=25℃
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
Rating
40
±20
32
20
150
34.7
0.27
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/℃
℃
℃
Thermal Data
Symbol
Parameter
Rthj-c
Thermal Resistance Junction-case
Rthj-a
Thermal Resistance Junction-ambient
Max.
Max.
Value
4.5
110
Unit
℃/W
℃/W
Data and specifications subject to change without notice
201028031
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet AP9962H.PDF ] | |
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| Número de pieza | Descripción | Fabricantes |
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