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Datasheet MDDQ02 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | MDDQ02 | Power RF Amplifiers
polyfet rf devices
Power RF Amplifiers
Power = 15.0 Watts Bandwidth = Gain = 25.0 dB 30 to 512 Mhz Vdd = 28.0 Volts
MDDQ02
50 ohms Input/Output Impedance
Description
The MDDQ02 is a 15 Watt, 2 stage high gain amplifier module covering a bandwidth of 30-512 Mhz. This compact m |  Polyfet RF Devices | amplifier |
MDD Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 1 | MDD06N100 | N-Channel MOSFET MDD06N100 – Single N-Channel Trench MOSFET 60V
MDD06N100
Single N-channel Trench MOSFET 60V, 50A, 10mΩ
ㄹ
General Description
The MDD06N100 uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. M  MagnaChip  | ||
| 2 | MDD1051 | Single N-channel Trench MOSFET MDD1051 – Single N-Channel Trench MOSFET 150V
MDD1051
Single N-channel Trench MOSFET 150V, 28A, 46mΩ
ㄹ
General Description
The MDD1051 uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDD10 MagnaChip | ||
| 3 | MDD142 | HIgh Power Diode Modules
MDD 142
High Power Diode Modules
IFRMS = 2x 300 A IFAVM = 2x 165 A VRRM = 800-1800 V
2 1 3
VRSM V 900 1300 1500 1700 1900
VRRM V 800 1200 1400 1600 1800
Type
3
1
2
MDD 142-08N1 MDD 142-12N1 MDD 142-14N1 MDD 142-16N1 MDD 142-18N1
Symbol IFRMS IFAVM IFSM
Test Conditions  IXYS Corporation | ||
| 4 | MDD142-08N1 | HIgh Power Diode Modules
MDD 142
High Power Diode Modules
IFRMS = 2x 300 A IFAVM = 2x 165 A VRRM = 800-1800 V
VRSM
V
900 1300 1500 1700 1900
VRRM
V
800 1200 1400 1600 1800
Type
MDD 142-08N1 MDD 142-12N1 MDD 142-14N1 MDD 142-16N1 MDD 142-18N1
312
2 1
3
Symbol IFRMS I
FAVM
IFSM
òi2dt
TVJ TVJM Ts IXYS Corporation | ||
| 5 | MDD142-12N1 | HIgh Power Diode Modules
MDD 142
High Power Diode Modules
IFRMS = 2x 300 A IFAVM = 2x 165 A VRRM = 800-1800 V
VRSM
V
900 1300 1500 1700 1900
VRRM
V
800 1200 1400 1600 1800
Type
MDD 142-08N1 MDD 142-12N1 MDD 142-14N1 MDD 142-16N1 MDD 142-18N1
312
2 1
3
Symbol IFRMS I
FAVM
IFSM
òi2dt
TVJ TVJM Ts IXYS Corporation | ||
| 6 | MDD142-14N1 | HIgh Power Diode Modules
MDD 142
High Power Diode Modules
IFRMS = 2x 300 A IFAVM = 2x 165 A VRRM = 800-1800 V
VRSM
V
900 1300 1500 1700 1900
VRRM
V
800 1200 1400 1600 1800
Type
MDD 142-08N1 MDD 142-12N1 MDD 142-14N1 MDD 142-16N1 MDD 142-18N1
312
2 1
3
Symbol IFRMS I
FAVM
IFSM
òi2dt
TVJ TVJM Ts IXYS Corporation | ||
| 7 | MDD142-16N1 | HIgh Power Diode Modules
MDD 142
High Power Diode Modules
IFRMS = 2x 300 A IFAVM = 2x 165 A VRRM = 800-1800 V
VRSM
V
900 1300 1500 1700 1900
VRRM
V
800 1200 1400 1600 1800
Type
MDD 142-08N1 MDD 142-12N1 MDD 142-14N1 MDD 142-16N1 MDD 142-18N1
312
2 1
3
Symbol IFRMS I
FAVM
IFSM
òi2dt
TVJ TVJM Ts IXYS Corporation |
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| Número de pieza | Descripción | Fabricantes | |
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