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PDF 2SK3642 Data sheet ( Hoja de datos )
| Número de pieza | 2SK3642 | |
| Descripción | SWITCHING N-CHANNEL POWER MOSFET | |
| Fabricantes | NEC | |
| Logotipo |  |
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3642
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK3642 is N-channel MOS FET device that features a low
on-state resistance and excellent switching characteristics, and
designed for low voltage high current applications such as
DC/DC converter with synchronous rectifier.
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3642-ZK
TO-252 (MP-3ZK)
FEATURES
• Low on-state resistance
RDS(on)1 = 9.5 mΩ MAX. (VGS = 10 V, ID = 32 A)
RDS(on)2 = 16 mΩ MAX. (VGS = 4.5 V, ID = 18 A)
• Low Ciss: Ciss = 1100 pF TYP.
• Built-in gate protection diode
(TO-252)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
30
Gate to Source Voltage (VDS = 0 V)
VGSS
±20
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) Note1
ID(DC)
ID(pulse)
±64
±190
Total Power Dissipation (TC = 25°C)
PT1 36
Total Power Dissipation
PT2 1.0
Channel Temperature
Tch 150
Storage Temperature
Single Avalanche Current Note2
Single Avalanche Energy Note2
Tstg –55 to + 150
IAS 25
EAS 62
V
V
A
A
W
W
°C
°C
A
mJ
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%
2. Starting Tch = 25°C, VDD = 15 V, RG = 25 Ω, L = 100 µH, VGS = 20 → 0 V
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D15970EJ4V0DS00 (4th edition)
Date Published January 2005 NS CP(K)
Printed in Japan
The mark shows major revised points.
2002
1 page  
2SK3642
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
25
20
VGS = 4.5 V
15
10
5
0
-50
10 V
ID = 32 A
Pulsed
0 50 100
Tch - Channel Temperature - °C
150
1000
SWITCHING CHARACTERISTICS
VDD = 15 V
VGS = 10 V
RG = 10 Ω
100
td(on)
10
tf
td(off)
tr
1
0.1
1 10
ID - Drain Current - A
100
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
1000
100
10 VGS = 10 V
1
0V
0.1
0.01
0
Pulsed
0.5 1 1.5
VF(S-D) - Source to Drain Voltage - V
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
10000
1000
C iss
C oss
100
C rss
VGS = 0 V
f = 1 MHz
10
0.01
0.1
1
10
VDS - Drain to Source Voltage - V
100
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
30 12
25
VDD = 24 V
20 15 V
10
8
15
VGS
6
10 4
52
VDS
ID = 64 A
00
0 5 10 15 20 25
QG - Gate Charge - nC
1000
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
di/dt = 100 A/µs
VGS = 0 V
100
10
1
0.1
1 10
IF - Diode Forward Current - A
100
Data Sheet D15970EJ4V0DS
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet 2SK3642.PDF ] | |
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