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Número de pieza | LN55 | |
Descripción | GaAs Infrared Light Emitting Diode | |
Fabricantes | Panasonic Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de LN55 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
No Preview Available ! Infrared Light Emitting Diodes
LN55
GaAs Infrared Light Emitting Diode
For optical control systems
Features
High-power output, high-efficiency : PO = 3.5 mW (typ.)
Suited for use with silicon photodetectors
Infrared light emission close to monochromatic light : λP = 950 nm (typ.)
High-speed modulation capability
Absolute Maximum Ratings (Ta = 25˚C)
Parameter
Power dissipation
Forward current (DC)
Pulse forward current
Reverse voltage (DC)
Operating ambient temperature
Storage temperature
* f = 100 Hz, Duty cycle = 0.1 %
Symbol Ratings
PD 75
IF 50
IFP* 1
VR 3
Topr –25 to +85
Tstg –30 to +100
Unit
mW
mA
A
V
˚C
˚C
ø3.5±0.2
4.5±0.3
Unit : mm
4.2±0.3
2.3 1.9
2-0.98±0.2
2-0.45±0.15
0.45±0.15
R1.75
2.54
1.2
12
1: Cathode
2: Anode
Electro-Optical Characteristics (Ta = 25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Radiant power
Peak emission wavelength
Spectral half band width
Forward voltage (DC)
Reverse current (DC)
PO IF = 50mA
λP IF = 50mA
∆λ IF = 50mA
VF IF = 50mA
IR VR = 3V
1.8 3.5
mW
950 nm
50 nm
1.5 V
10 µA
Capacitance between pins
Ct VR = 0V, f = 1MHz
50 pF
Half-power angle
θ The angle in which radiant intencity is 50% 35 deg.
IF — Ta
60
50
40
30
20
10
0
– 25 0
20 40 60 80 100
Ambient temperature Ta (˚C )
IFP — Duty cycle
10 2 Ta = 25˚C
10
1
10 –1
10 –2
10 –3
10 –2
10 –1
1
10
Duty cycle (%)
10 2
IF — VF
80
Ta = 25˚C
70
60
50
40
30
20
10
0
0 0.4 0.8 1.2 1.6
Forward voltage VF (V)
1
1 page |
Páginas | Total 2 Páginas | |
PDF Descargar | [ Datasheet LN55.PDF ] |
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