Datasheet BLP30 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	Category
1	BLP30	Changing the Shape of Power BLP30 AC-DC Series Data Sheet 30 Watts Features • • • • • • • • • • • • RoHS compliant for all six substances 2” x 4” footprint Component height less than 1” 25 W rating with natural convection cooling 30 W rating with 10 CFM airflow Compliance to	Power-One	data
2	BLP3062	Si PIN junction photodiode BLP3062 PIN 结 Si 光电二极管描述工作在低频区域的 Si 光电二极管，可探测波长处于峰值波长附近的光信号。应用 • 遥控电路 • 光纤通信结构芯片结构：平面 PIN 型结构电极：顶部 AlSi 外形图和尺寸 Anode C	SHANGHAI BELLING	diode

BLP Datasheet ( Hoja de datos ) - resultados coincidentes

N.º	Número de pieza	Descripción	Fabricantes	Catagory
1	BLP0240	Si PIN junction photodiode BLP0240 PIN 结 Si 光电二极管描述工作在低频区域的 Si 光电二极管，可探测波长处于峰值波长附近的光信号。应用 • 遥控电路 • 光纤通信结构芯片结构：平面 PIN 型结构电极：顶部 AlSi 外形图和尺寸 Anode C	SHANGHAI BELLING	diode
2	BLP1010	PN junction Si photocell BLP1010 PN 结 Si 光电池描述工作在低频区域的 Si 光电池，可接收波长处于峰值波长附近的光信号。应用 • 遥控电路 • 光纤通信结构芯片结构：平面 PN 型结构电极：顶部 AlSi 外形图和尺寸 Anode P 芯片尺寸�	SHANGHAI BELLING	data
3	BLP10H603	Broadband LDMOS driver transistor BLP10H603 Broadband LDMOS driver transistor Rev. 1 — 2 October 2014 Product data sheet 1. Product profile 1.1 General description A 2.5 W plastic LDMOS power transistor for broadcast transmitter and ISM applications at frequencies from HF to 1400 MHz. Table 1. Application performance Test sig	NXP Semiconductors	transistor
4	BLP10H605	Broadband LDMOS driver transistor BLP10H605 Broadband LDMOS driver transistor Rev. 3 — 2 October 2014 Product data sheet 1. Product profile 1.1 General description A 5 W plastic LDMOS power transistor for broadcast transmitter and ISM applications at frequencies from HF to 1400 MHz. Table 1. Application performance Test signa	NXP Semiconductors	transistor
5	BLP10H610	Broadband LDMOS driver transistor BLP10H610 Broadband LDMOS driver transistor Rev. 3 — 25 September 2014 Product data sheet 1. Product profile 1.1 General description A 10 W plastic LDMOS power transistor for broadcast transmitter and ISM applications at frequencies from HF to 1400 MHz. Table 1. Application performance Test s	NXP Semiconductors	transistor
6	BLP1208	PN junction Si photocell BLP1208 PN 结 Si 光电池描述工作在低频区域的 Si 光电池，可接收波长处于峰值波长附近的光信号。应用 • 遥控电路 • 光纤通信结构芯片结构：平面 PN 型结构电极：顶部 AlSi 外形图和尺寸 Anode P 芯片尺寸�	SHANGHAI BELLING	data
7	BLP15M7160P	Power LDMOS transistor BLP15M7160P Power LDMOS transistor Rev. 3 — 9 February 2015 Product data sheet 1. Product profile 1.1 General description A 160W LDMOS RF power transistor for broadcast transmitter and industrial applications. The transistor is suitable for the frequency range HF to 1500 MHz. The excellent rugg	NXP Semiconductors	transistor
8	BLP25M705	Broadband LDMOS driver transistor BLP25M705 Broadband LDMOS driver transistor Rev. 2 — 9 February 2015 Product data sheet 1. Product profile 1.1 General description A 5 W LDMOS power transistor for broadcast and industrial applications in the HF to 2500 MHz band. Table 1. Application information Test signal f (MHz) Pulsed	NXP Semiconductors	transistor
9	BLP25M710	Broadband LDMOS driver transistor BLP25M710 Broadband LDMOS driver transistor Rev. 1 — 29 August 2013 Product data sheet 1. Product profile 1.1 General description A 10 W LDMOS power transistor for broadcast and industrial applications in the HF to 2500 MHz band. Table 1. Application information Test signal f (MHz) IDq (mA)	NXP Semiconductors	transistor

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nuevas actualizaciones

Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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