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Datasheet APTM20UM04S Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | APTM20UM04S-ALN | MOSFET Power Module APTM20UM04S-AlN
Single switch Series & parallel diodes MOSFET Power Module
SK CR1 D
VDSS = 200V RDSon = 4mΩ max @ Tj = 25°C ID = 417A @ Tc = 25°C
Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Features • Power MOS 7® M |  Advanced Power Technology | mosfet |
APT Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | APT05DC120HJ | SiC Diode Full Bridge Power Module APT05DC120HJ
ISOTOP® SiC Diode Full Bridge Power Module
VRRM = 1200V IC = 5A @ Tc = 100°C
Application • • • • Switch mode power supplies rectifier Induction heating Welding equipment High speed rectifiers
Features • SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Te  Microsemi diode | | |
| 2 | APT06DC60HJ | SiC Diode Full Bridge Power Module APT06DC60HJ
ISOTOP® SiC Diode Full Bridge Power Module
VRRM = 600V IC = 6A @ Tc = 100°C
Application • • • • Switch mode power supplies rectifier Induction heating Welding equipment High speed rectifiers
Features • SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temp Microsemi diode | | |
| 3 | APT1001 | Power MOS VI is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs APT1001RBLC APT1001RSLC
1000V 11A 1.000W
BLC D3PAK
TO-247
POWER MOS VITM
Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss. Lower gate charge c Advanced Power Technology mosfet | | |
| 4 | APT1001 | N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS APT1001RBLC APT1001RSLC
1000V 11A 1.000W
BLC D3PAK
TO-247
POWER MOS VITM
Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss. Lower gate charge c Advanced Power Technology mosfet | | |
| 5 | APT1001R1AVR | Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs APT1001R1AVR
1000V 9A 1.100Ω
POWER MOS V ®
Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds throu Advanced Power Technology mosfet | | |
| 6 | APT1001R1BN | N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS D
TO-247
G S
APT1001R1BN 1000V 10.5A 1.10Ω
®
POWER MOS IV
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS PD TJ,TSTG TL Parameter Drain-Source Voltage
APT1001R3BN 1000V 10.0A 1.30Ω
All Ratings: TC = 25°C unless otherwise specified.
APT 1001RBN APT 1001R3BN UNIT Volts Amps
N - CHANNEL ENHANCEMENT M Advanced Power Technology mosfet | | |
| 7 | APT1001R1BVFR | Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. APT1001R1BVFR
1000V 11A 1.100Ω
POWER MOS V ®
FREDFET
TO-247
Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster swi Advanced Power Technology mosfet | | |
| 8 | APT1001R1HVR | Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. APT1001R1HVR
1000V 9A 1.100Ω
POWER MOS V ®
TO-258
Power MOS is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds t Advanced Power Technology mosfet | | |
| 9 | APT1001R3BN | N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS D
TO-247
G S
APT1001R1BN 1000V 10.5A 1.10Ω
®
POWER MOS IV
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS PD TJ,TSTG TL Parameter Drain-Source Voltage
APT1001R3BN 1000V 10.0A 1.30Ω
All Ratings: TC = 25°C unless otherwise specified.
APT 1001RBN APT 1001R3BN UNIT Volts Amps
N - CHANNEL ENHANCEMENT M Advanced Power Technology mosfet | |
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