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PDF BSS82B Data sheet ( Hoja de datos )
| Número de pieza | BSS82B | |
| Descripción | (BSS82B/C) SOT23 PNP SILICON PLANAR SWITCHING TRANSISTORS | |
| Fabricantes | Zetex Semiconductors | |
| Logotipo |  |
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SOT23 PNP SILICON PLANAR
SWITCHING TRANSISTORS
ISSUE 2 SEPTEMBER 95 7
PARTMARKING DETAILS - BSS82B - CL
BSS82C - CM
BSS82B
BSS82C
E
C
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCEO
Emitter-Base Voltage
VEBO
Peak Pulse Current
ICM
Power Dissipation at Tamb=25°C
PTOT
Operating and Storage Temperature Range tj:tstg
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
PARAMETER
SYMBOL MIN. MAX.
-60
-60
-5
-800
330
-55 to +150
V
V
V
mA
mW
°C
UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO -60
V IC=-10µA
Collector-Emitter
Breakdown Voltage
V(BR)CEO -60
V IC=-10mA*
Emitter-Base
Breakdown Voltage
V(BR)EBO -5
IE=-10µA
Collector Cut-Off
Current
Emitter Cut-Off
Current
ICBO
IEBO
-10 nA VCB=-50V,
-10 µA VCB=-50V, Tamb=150 °C
-10 nA VBE=-3V
Collector-Emitter
Saturation Voltage
VCE(sat)
-0.4 V
-1.6 V
IC=-150mA,IB=-15mA*
IC=-500mA,IB=50mA*
Static Forward
Current
Transfer Ratio
BSS80B hFE
BSS80C
40 120
100 300
IC=150mA,VCE=10V
IC=150mA,VCE=10V
Transition Frequency
fT 200
MHz VCE=-20V,IC=-50mA
f=100MHz
Output Capacitance
Delay Time
Rise Time
Storage Time
Fall Time
Cobo
td
tr
ts
tf
8 pF VCB=-10V,f=1MHz
10 ns
40 ns VCC=-30V, IC=-150mA
80 ns IB1=-IB2=-15mA
30 ns
* Measured under pulsed conditions. Pulse width = 300µs. Duty cycle 2%
PAGE NUMBER
1 page | ||
| Páginas | Total 1 Páginas | |
| PDF Descargar | [ Datasheet BSS82B.PDF ] | |
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