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PDF BSS63 Data sheet ( Hoja de datos )
| Número de pieza | BSS63 | |
| Descripción | SOT23 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR | |
| Fabricantes | Zetex Semiconductors | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de BSS63 (archivo pdf) en la parte inferior de esta página. Total 1 Páginas | ||
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SOT23 PNP SILICON PLANAR
HIGH VOLTAGE TRANSISTOR
ISSUE 2 SEPTEMBER 95 7
COMPLIMENTARY TYPE BSS64
PARTMARKING DETAIL BSS63 - T3
BSS63R - T6
BSS63
E
C
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCEO
Emitter-Base Voltage
VEBO
Continuous Collector Current
IC
Power Dissipation at Tamb=25°C
PTOT
Operating and Storage Temperature Range tj:tstg
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
-110
-100
-6
-100
330
-55 to +150
PARAMETER
SYMBOL MIN. MAX. UNIT CONDITIONS.
UNIT
V
V
V
mA
mW
°C
Collector-Base
Breakdown Voltage
V(BR)
-110
V IC=-10µA
Collector-Emitter
Breakdown Voltage
V(BR)CEO
-100
V IC=-100µA*
Emitter-Base Breakdown V(BR)EBO
Voltage
-6
V IE=-10µA
Collector Cut-Off Current IEBO
Emitter Cut-Off Current
Collector-Emitter
Saturation Voltage
IEBO
VCE(sat)
-100
-50
-200
-250
nA
µA
VVCCBB==--9900VV,,Tamb=150oC
nA VEB=-6V
mV IC=-25mA, IB=-2.5mA
Base-Emitter Saturation VBE(sat)
Voltage
-900 mV IC=-25mA, IB=-2.5mA
Static Forward Current
Transition Frequency
hFE
fT
30 IC=-10mA, VCE=-1V
30 IC=25mA, VCE=1V
Typ
50 85 MHz VCE=-5V, IC=25mA
f=35 MHz
Output Capacitance
Cobo
Typ.
3 pF VCB=-10V, f=1MHz
* Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
PAGE NUMBER
1 page | ||
| Páginas | Total 1 Páginas | |
| PDF Descargar | [ Datasheet BSS63.PDF ] | |
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