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PDF AO4813 Data sheet ( Hoja de datos )
| Número de pieza | AO4813 | |
| Descripción | Dual P-Channel Enhancement Mode Field Effect Transistor | |
| Fabricantes | Alpha & Omega Semiconductors | |
| Logotipo |  |
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AO4813
Dual P-Channel Enhancement Mode Field Effect Transistor
General Description
The AO4813 uses advanced trench technology to
provide excellent RDS(ON), and low gate charge. This
device is suitable for use as a load switch or in PWM
applications. Standard product AO4813 is Pb-free
(meets ROHS & Sony 259 specifications).
Features
VDS (V) = -30V
ID = -7.1 A
(VGS = -10V)
RDS(ON) < 25mΩ (VGS = -10V)
RDS(ON) < 40mΩ (VGS = -4.5V)
UIS TESTED!
Rg,Ciss,Coss,Crss Tested
www.DataSheet4U.com
SOIC-8
Top View
S2 1 8 D2
G2 2 7 D2
S1 3 6 D1
G1 4 5 D1
D1 D2
G1 G2
S1 S2
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain TA=25°C
Current AF
TA=70°C
Pulsed Drain Current B
ID
IDM
TA=25°C
Power Dissipation TA=70°C
Avalanche Current B
Repetitive avalanche energy 0.3mH B
PD
IAR
EAR
Junction and Storage Temperature Range TJ, TSTG
Maximum
-30
±20
-7.1
-5.6
-30
2
1.28
11
18
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJL
Typ
48
74
35
Max
62.5
110
40
Alpha & Omega Semiconductor, Ltd.
Units
V
V
A
W
A
mJ
°C
Units
°C/W
°C/W
°C/W
www.aosmd.com
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet AO4813.PDF ] | |
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