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PDF STP30N06 Data sheet ( Hoja de datos )
| Número de pieza | STP30N06 | |
| Descripción | N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR | |
| Fabricantes | STMicroelectronics | |
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Hay una vista previa y un enlace de descarga de STP30N06 (archivo pdf) en la parte inferior de esta página. Total 10 Páginas | ||
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STP30N06
STP30N06FI
N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTOR
TYPE
STP30N06
STP30N06FI
VDSS
60 V
60 V
R DS( on)
< 0.05 Ω
< 0.05 Ω
ID
30 A
19 A
s TYPICAL RDS(on) = 0.045 Ω
s AVALANCHE RUGGED TECHNOLOGY
s 100% AVALANCHE TESTED
s REPETITIVE AVALANCHE DATA AT 100oC
s LOW GATE CHARGE
s HIGH CURRENT CAPABILITY
s 175oC OPERATING TEMPERATURE
s APPLICATION ORIENTED
CHARACTERIZATION
www.DataSheet4U.com
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SOLENOID AND RELAY DRIVERS
s REGULATORS
s DC-DC & DC-AC CONVERTERS
s MOTOR CONTROL, AUDIO AMPLIFIERS
s AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc.)
3
2
1
TO-220
3
2
1
ISOWATT220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
P ar amete r
VD S Drain-source Voltage (VGS = 0)
VDG R Drain- gate Voltage (RGS = 20 kΩ)
VGS Gate-source Voltage
ID Drain Current (continuous) at T c = 25 oC
ID Drain Current (continuous) at T c = 100 oC
IDM(•) Drain Current (pulsed)
Ptot Total Dissipation at Tc = 25 oC
Derating Factor
VISO Insulation Withstand Voltage (DC)
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
December 1996
Val ue
STP30N06
ST P3 0N 06 F I
60
60
± 20
30 19
21 13
120 120
105 40
0.7 0.27
2000
-65 to 175
175
Unit
V
V
V
A
A
A
W
W/oC
V
oC
oC
1/10
1 page  
Transconductance
STP30N06/FI
Static Drain-source On Resistance
Gate Charge vs Gate-source Voltage
Capacitance Variations
Normalized Gate Threshold Voltage vs
Temperature
Normalized On Resistance vs Temperature
5/10
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet STP30N06.PDF ] | |
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