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PDF 2N7002M Data sheet ( Hoja de datos )
| Número de pieza | 2N7002M | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | Jiangsu Changjiang Electronics | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de 2N7002M (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
WBFBP-03B Plastic-Encapsulate MOSFET
2N7002M MOSFET( N-Channel )
DESCRIPTION
High cell density, DMOS technology. These products have been designed to
minimize on-state resistance while provide rugged, reliable, and fast switching
performance. They can be used in most applications requiring up to 400mA DC
and can deliver pulsed currents up to 2A. These products are particularly suited
for low voltage, low current applications such as small servo motor control, power
MOSFET gate drivers, and other switching applications.
FEATURES
High density cell design for low RDS(ON).
Voltage controlled small signal switch.
Rugged and reliable.
High saturation current capability.
WBFBP-03B
(1.2×1.2×0.5) TOP
unit: mm
D
GS
D
1. GATE
2. SOURCE
3. DRAIN
BACK
SG
APPLICATION
N-Channel Enhancement Mode Field Effect Transistor
For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM,
www.DataSheet4U.com
DVD-ROM, Note book PC, etc.)
MARKING: 72
D
72
GS
MAXIMUM RATINGS* TA=25℃ unless otherwise noted
Symbol
Parameter
VDS
ID
PD
RθJA
TJ
Tstg
Drain-Source voltage
Drain Current
Power Dissipation
Thermal Resistance. Junction to Ambient Air
Junction Temperature
Storage Temperature
Value
60
115
150
625
150
-55-150
Units
V
mA
mW
℃/W
℃
℃
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet 2N7002M.PDF ] | |
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