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Datasheet NJ1800DL Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | NJ1800DL | Silicon Junction Field-Effect Transistor F-46
01/99
NJ1800DL Process
Silicon Junction Field-Effect Transistor
¥ ¥ ¥ ¥ Low-Current Low Gate Leakage Current High Input Impedance Low-Noise
10 mA +150°C – 65°C to +175°C
D
G
Absolute maximum ratings at 25¡C free-air temperature.
Gate Current, Ig Operating Junction Temperature, T |  InterFET | transistor |
NJ1 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | NJ132 | Silicon Junction Field-Effect Transistor F-32
01/99
NJ132 Process
Silicon Junction Field-Effect Transistor
¥ High Speed Switch ¥ Low-Noise Amplifier
Absolute maximum ratings at TA = 25¡C
Gate Current, Ig Operating Junction Temperature, Tj Storage Temperature, Ts 10 mA +150°C – 65°C to +175°C
G S-D S-D G
Die Size = 0.022" X 0.02  INTERFET transistor | | |
| 2 | NJ132L | Silicon Junction Field-Effect Transistor Low-Noise Amplifier F-34
01/99
NJ132L Process
Silicon Junction Field-Effect Transistor
¥ Low-Noise Amplifier
Absolute maximum ratings at TA = 25¡C
Gate Current, Ig Operating Junction Temperature, Tj Storage Temperature, Ts 10 mA +150°C – 65°C to +175°C
G S-D S-D G
Die Size = 0.022" X 0.022" All Bond Pads = 0 InterFET transistor | | |
| 3 | NJ14AL | Silicon Junction Field-Effect Transistor F-4
01/99
NJ14AL Process
Silicon Junction Field-Effect Transistor
¥ Low-Noise, High Gain Amplifier ¥ Rf AMP to 1.0 Ghz
Absolute maximum ratings at TA = 25¡C
Gate Current, Ig Operating Junction Temperature, Tj Storage Temperature, Ts 10 mA +150°C – 65°C to +175°C
G S-D S-D G
Die Size = 0. InterFET transistor | | |
| 4 | NJ16 | Silicon Junction Field-Effect Transistor F-6
01/99
NJ16 Process
Silicon Junction Field-Effect Transistor
¥ Low Current Switch ¥ General Purpose Amplifier ¥ High Breakdown Voltage
Absolute maximum ratings at TA = 25¡C
Gate Current, Ig Operating Junction Temperature, Tj Storage Temperature, Ts 10 mA +150°C – 65°C to +175°C
G S-D InterFET transistor | | |
| 5 | NJ1800D | Silicon Junction Field-Effect Transistor F-44
01/99
NJ1800D Process
Silicon Junction Field-Effect Transistor
¥ Ultra Low-Noise Pre-Amplifier
Absolute maximum ratings at TA = 25¡C
Gate Current, Ig Operating Junction Temperature, Tj Storage Temperature, Ts 10 mA +150°C – 65°C to +175°C
D
G
Devices in this Databook based on the N InterFET transistor | | |
| 6 | NJ1800DL | Silicon Junction Field-Effect Transistor F-46
01/99
NJ1800DL Process
Silicon Junction Field-Effect Transistor
¥ ¥ ¥ ¥ Low-Current Low Gate Leakage Current High Input Impedance Low-Noise
10 mA +150°C – 65°C to +175°C
D
G
Absolute maximum ratings at 25¡C free-air temperature.
Gate Current, Ig Operating Junction Temperature, T InterFET transistor | |
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