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PDF BSS79C Data sheet ( Hoja de datos )

Número de pieza BSS79C
Descripción NPN General Purpose Amplifier
Fabricantes Fairchild Semiconductor 
Logotipo Fairchild Semiconductor Logotipo



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No Preview Available ! BSS79C Hoja de datos, Descripción, Manual

BSS79C
NPN General Purpose Amplifier
• This device is for use as a medium power amplifier and swith requiring
collector currents up to 500mA.
• Sourced from process 19.
• See BCW65C for characteristics.
C
Absolute Maximum Ratings * Ta=25°C unless otherwise noted
Symbol
Parameter
Value
VCEO
Collector-Emitter Voltage
40
VCBO
Collector-Base Voltage
75
VEBO
Emitter-Base Voltage
6.0
IC
Collector Current
- Continuous
800
TJ, TSTG
Operating and Storage Junction Temperature Range
-55 ~ +150
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1. These ratings are based on a maximum junction temperature of 150 degrees C.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
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Electrical Characteristics Ta=25°C unless otherwise noted
Symbol
Parameter
Test Condition
Off Characteristics
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Cutoff Current
IEBO
Emitter-Cutoff Current
On Characteristics *
IC = 10mA, IB = 0
IC = 10µA, IE = 0
IE = 10µA, IC = 0
VCB = 60V
VCB = 60V, Ta = 150°C
VEB = 3.0V, IC = 0
hFE
VCE(sat)
DC Current Gain
Collector-Emitter Saturation Voltage
Small Signal Characteristics
IC = 150mA, VCE = 10V
IC = 150mA, IB = 15mA
IC = 500mA, IB = 50mA
fT Current Gain - Bandwidth Product
CCB Collector-Base Capacitance
Switching Characteristics
IC = 20mA, VCE = 20V, f = 100MHz
VCB = 10V, IE = 0, f = 1.0MHz
td Delay Time
tr Rise Time
ts Storage Time
tf Fall Time
VCC = 30V, VBE(OFF) = 0.5V,
IC = 150mA, IB1 = 15mA
VCC = 30V, IC = 150mA,
IB1 = IB2 = 15mA
Min.
75
40
6.0
100
E
B SOT-23
Mark: CF
Units
V
V
V
mA
°C
Max.
10
10
10
300
0.3
1.0
250
8.0
10
10
265
60
Units
V
V
V
nA
µA
nA
V
V
MHz
pF
ns
ns
ns
ns
©2004 Fairchild Semiconductor Corporation
Rev. A, June 2004

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