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PDF 2SD718 Data sheet ( Hoja de datos )
| Número de pieza | 2SD718 | |
| Descripción | 120V, 10A, NPN Silicon Transistor | |
| Fabricantes | Unisonic Technologies | |
| Logotipo |  |
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 1. NPN Transistor ( PDF )  Hay una vista previa y un enlace de descarga de 2SD718 (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
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UTC2SD718 NPN EPITAXIAL SILICON TRANSISTOR
HIGH POWER AMPLIFIER
APPLICATION
FEATURES
*Recommended for 45~50W Audio Frequency
*Amplifier Output Stage.
*Complementary to 2SB688.
1
TO-3P
1: BASE 2:COLLECTOR 3: EMITTER
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
PARAMETER
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
www.DataSheet4U.com
VCBO
VCEO
VEBO
Collector Current
Ic
Base Current
Collector Power Dissipation (Tc=25℃)
IB
Pc
Junction Temperature
Tj
Storage Temperature Range
Tstg
RATINGS
120
120
5
10
1
80
150
-55 ~150
UNIT
V
V
V
A
A
W
℃
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃,unless otherwise specified))
PARAMETER
SYMBOL
TEST CONDITION
MIN
Collector-Emitter Breakdown Voltage V(BR)CEO Ic=50mA,IB=0
Collector Cut-off Current
ICBO
VCB=120V,IE=0
120
Emitter Cut-off Current
IEBO
VEB=5V,Ic=0
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
Transition Frequency
Collector Output Capacitance
HFE
VCE(sat)
VBE
fT
Cob
VCE=5V,Ic=1A
Ic=6A,IB=0.6A
VCE=5V,Ic=5A
VCE=5V,Ic=1A
VCB=10V,IE=0, f=1MHz
55
TYP
12
170
MAX
10
10
160
2.0
1.5
UNIT
V
μA
μA
V
V
MHz
pF
CLASSIFICATION OF hFE
RANK
RANGE
R
55-110
O
80-160
UTC
UNISONIC TECHNOLOGIES CO., LTD. 1
QW-R214-003,A
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet 2SD718.PDF ] | |
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