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PDF BS108 Data sheet ( Hoja de datos )
| Número de pieza | BS108 | |
| Descripción | Small Signal MOSFET | |
| Fabricantes | ON Semiconductor | |
| Logotipo |  |
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BS108
Preferred Device
Small Signal MOSFET
250 mAmps, 200 Volts,
Logic Level
N−Channel TO−92
This MOSFET is designed for high voltage, high speed switching
applications such as line drivers, relay drivers, CMOS logic,
microprocessor or TTL to high voltage interface and high voltage
display drivers.
Features
• Low Drive Requirement, VGS = 3.0 V max
• Inherent Current Sharing Capability Permits Easy Paralleling of
many Devices
• Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Drain −Source Voltage
VDSS 200 Vdc
Gate−Source Voltage
VGS ±20 Vdc
Drain Current
Continuous (Note 1)
Pulsed (Note 2)
mAdc
ID 250
IDM 500
Total Power Dissipation
@ TA = 25°C
Derate above TA = 25°C
PD
350 mW
6.4 mW/°C
Operating and Storage Temperature Range TJ, Tstg −55 to +150 °C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. The Power Dissipation of the package may result in a lower continuous drain
current.
2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
http://onsemi.com
250 mAMPS
200 VOLTS
RDS(on) = 8 W
N−Channel
D
G
S
MARKING
DIAGRAM
BS108
AYWW G
TO−92
G
CASE 29−11
1
2
STYLE 30
3
BS108 = Device Code
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
BS108
BS108G
BS108ZL1
Package
TO−92
TO−92
(Pb−Free)
TO−92
Shipping
1000 Units/Box
1000 Units/Box
2000/Ammo Pack
BS108ZL1G
TO−92
(Pb−Free)
2000/Ammo Pack
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2006
February, 2006 − Rev. 2
1
Publication Order Number:
BS108/D
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet BS108.PDF ] | |
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