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Datasheet MJ2955 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category
1MJ2955Complementary Power Transistors

2N3055, MJ2955 Complementary Power Transistors Designed for use in general-purpose amplifier and switching applications. Features: • Power dissipation - PD = 115W at TC = 25°C. • DC current gain hFE = 20 to 70 at IC = 4.0A. • VCE(sat) = 1.1V (Maximum) at IC = 4.0A, IB = 400mA. Pin 1. Base 2.
Multicomp
Multicomp
transistor
2MJ2955PNP PLANAR SILICON TRANSISTOR(AUDIO POWER AMPLIFIER DC TO DC CONVERTER)

MJ2955 AUDIO POWER AMPLIFIER DC TO DC CONVERTER PNP PLANAR SILICON TRANSISTOR TO-3 ! ! ! High Current Capability High Power Dissipation Complementary to MJ3055 ABSOLUTE MAXIMUM RATING (Ta=25°C) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base voltage Collector Curre
Wing Shing Computer Components
Wing Shing Computer Components
transistor
3MJ2955COMPLEMENTARY SILICON POWER TRANSISTORS

TAB 1 2 TO-3 Figure 1. Internal schematic diagram 2N3055, MJ2955 Complementary power transistors Datasheet - production data Features • Low collector-emitter saturation voltage • Complementary NPN - PNP transistors Applications • General purpose • Audio amplifier Description The devices are
ST Microelectronics
ST Microelectronics
transistor
4MJ295515 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60 VOLTS 115 WATTS

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N3055/D Complementary Silicon Power Transistors . . . designed for general–purpose switching and amplifier applications. • DC Current Gain — hFE = 20 – 70 @ IC = 4 Adc • Collector–Emitter Saturation Voltage — VCE(sat) = 1
Motorola Semiconductors
Motorola Semiconductors
transistor
5MJ2955POWER TRANSISTORS(15A /50V /115W)

A A A
Mospec
Mospec
transistor


MJ2 Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes Catagory
1MJ2119316 ampere complementary silicon power transistors 250 volts 250 watts

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJ21193/D Silicon Power Transistors The MJ21193 and MJ21194 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. • Total Harmonic Distortion Ch
Motorola Semiconductors
Motorola Semiconductors
transistor
2MJ21193Silicon Power Transistors

MJ21193 - PNP MJ21194 - NPN Silicon Power Transistors The MJ21193 (PNP) and MJ21194 (NPN) utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. Features • Total Harmonic Distortion Characterized •
ON
ON
transistor
3MJ21193SILICON POWER TRANSISTOR

SavantIC Semiconductor Product Specification Silicon PNP Power Transistors MJ21193 www.datasheet4u.com DESCRIPTION ·With TO-3 package ·Complement to type MJ21194 ·Excellent gain linearity APPLICATIONS ·Designed for high power audio output,disk head positioners and linear applications PINNIN
SavantIC
SavantIC
transistor
4MJ21194Silicon Power Transistors

MJ21193 - PNP MJ21194 - NPN Silicon Power Transistors The MJ21193 (PNP) and MJ21194 (NPN) utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. Features • Total Harmonic Distortion Characterized •
ON
ON
transistor
5MJ21194Silicon NPN Power Transistors

www.datasheet4u.com SavantIC Semiconductor Product Specification Silicon NPN Power Transistors MJ21194 DESCRIPTION ·With TO-3 package ·Complement to type MJ21193 ·Excellent gain linearity APPLICATIONS ·Designed for high power audio output,disk head positioners and linear applications PINNIN
Savantic
Savantic
transistor
6MJ21194SILICON POWER TRANSISTOR

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors MJ21194 www.datasheet4u.com DESCRIPTION ·With TO-3 package ·Complement to type MJ21193 ·Excellent gain linearity APPLICATIONS ·Designed for high power audio output,disk head positioners and linear applications PINNIN
SavantIC
SavantIC
transistor
7MJ21195Silicon PNP Power Transistor

INCHANGE Semiconductor Silicon PNP Power Transistor DESCRIPTION ·Excellent Gain linearity ·High DC Current Gain- : hFE= 25(min) @IC = -8A ·Total Harmonic Distortion characterized. ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·Compl
Inchange Semiconductor
Inchange Semiconductor
transistor



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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

Sanken
Sanken
PDF


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