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Datasheet MJ2955 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | MJ2955 | Complementary Power Transistors 2N3055, MJ2955
Complementary Power Transistors
Designed for use in general-purpose amplifier and switching applications.
Features:
• Power dissipation - PD = 115W at TC = 25°C. • DC current gain hFE = 20 to 70 at IC = 4.0A. • VCE(sat) = 1.1V (Maximum) at IC = 4.0A, IB = 400mA.
Pin 1. Base 2. | Multicomp | transistor |
2 | MJ2955 | PNP PLANAR SILICON TRANSISTOR(AUDIO POWER AMPLIFIER DC TO DC CONVERTER) MJ2955
AUDIO POWER AMPLIFIER DC TO DC CONVERTER
PNP
PLANAR SILICON TRANSISTOR
TO-3
! ! ! High Current Capability High Power Dissipation Complementary to MJ3055
ABSOLUTE MAXIMUM RATING (Ta=25°C)
Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base voltage Collector Curre | Wing Shing Computer Components | transistor |
3 | MJ2955 | COMPLEMENTARY SILICON POWER TRANSISTORS TAB
1 2
TO-3 Figure 1. Internal schematic diagram
2N3055, MJ2955
Complementary power transistors
Datasheet - production data
Features
• Low collector-emitter saturation voltage • Complementary NPN - PNP transistors
Applications
• General purpose • Audio amplifier
Description
The devices are | ST Microelectronics | transistor |
4 | MJ2955 | 15 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60 VOLTS 115 WATTS MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by 2N3055/D
Complementary Silicon Power Transistors
. . . designed for general–purpose switching and amplifier applications. • DC Current Gain — hFE = 20 – 70 @ IC = 4 Adc • Collector–Emitter Saturation Voltage — VCE(sat) = 1 | Motorola Semiconductors | transistor |
5 | MJ2955 | POWER TRANSISTORS(15A /50V /115W) A
A
A
| Mospec | transistor |
MJ2 Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | MJ21193 | 16 ampere complementary silicon power transistors 250 volts 250 watts MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MJ21193/D
Silicon Power Transistors
The MJ21193 and MJ21194 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. • Total Harmonic Distortion Ch Motorola Semiconductors transistor | | |
2 | MJ21193 | Silicon Power Transistors MJ21193 - PNP MJ21194 - NPN
Silicon Power Transistors
The MJ21193 (PNP) and MJ21194 (NPN) utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications.
Features
• Total Harmonic Distortion Characterized • ON transistor | | |
3 | MJ21193 | SILICON POWER TRANSISTOR SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
MJ21193
www.datasheet4u.com
DESCRIPTION ·With TO-3 package ·Complement to type MJ21194 ·Excellent gain linearity APPLICATIONS ·Designed for high power audio output,disk head positioners and linear applications PINNIN SavantIC transistor | | |
4 | MJ21194 | Silicon Power Transistors MJ21193 - PNP MJ21194 - NPN
Silicon Power Transistors
The MJ21193 (PNP) and MJ21194 (NPN) utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications.
Features
• Total Harmonic Distortion Characterized • ON transistor | | |
5 | MJ21194 | Silicon NPN Power Transistors www.datasheet4u.com
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
MJ21194
DESCRIPTION ·With TO-3 package ·Complement to type MJ21193 ·Excellent gain linearity APPLICATIONS ·Designed for high power audio output,disk head positioners and linear applications PINNIN Savantic transistor | | |
6 | MJ21194 | SILICON POWER TRANSISTOR SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
MJ21194
www.datasheet4u.com
DESCRIPTION ·With TO-3 package ·Complement to type MJ21193 ·Excellent gain linearity APPLICATIONS ·Designed for high power audio output,disk head positioners and linear applications PINNIN SavantIC transistor | | |
7 | MJ21195 | Silicon PNP Power Transistor INCHANGE Semiconductor
Silicon PNP Power Transistor
DESCRIPTION ·Excellent Gain linearity ·High DC Current Gain-
: hFE= 25(min) @IC = -8A ·Total Harmonic Distortion characterized. ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation ·Compl Inchange Semiconductor transistor | |
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Número de pieza | Descripción | Fabricantes | |
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