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PDF BSS76 Data sheet ( Hoja de datos )

Número de pieza BSS76
Descripción HIGH VOLTAGE PNP SILICON TRANSISTOR
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P
LAB
MECHANICAL DATA
Dimensions in mm (inches)
5.84 (0.230)
5.31 (0.209)
4.95 (0.195)
4.52 (0.178)
BSS76
HIGH VOLTAGE
PNP SILICON
TRANSISTOR
0.48 (0.019)
0.41 (0.016)
dia.
2.54 (0.100)
Nom.
31
2
TO–18 (TO-206AA) PACKAGE
PIN 1 – Emitter PIN 2 – Base PIN 3 – Collector
FEATURES
Hermetic Metal Package
Screening Options Available
APPLICATIONS:
All Semelab hermetically sealed prod-
ucts can be processed in accordance
with the requirements of BS, CECC
and JAN specifications
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)
VCBO
Collector – Base Voltage
VCEO
Collector – Emitter Voltage
VEBO
Emitter – Base Voltage
IC Continuous Collector Current
PD
Total Device Dissipation
TA = 25°C
Derate above 25°C
PD
Total Device Dissipation
TC = 25°C
Derate above 25°C
TJ , TSTG
RθJC
Operating Junction & Storage Temperature Range
Thermal Resistance, Junction – Case
-300V
-300V
-5V
-0.5A
0.5W
2.86mW/°C
2.5W
14.3mW/°C
-65 to 200°C
70°C/W
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: [email protected] Website: http://www.semelab.co.uk
Document Number 5747
Issue 1

1 page





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