|
|
Datasheet IXFR34N80 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | IXFR34N80 | Single MOSFET Die Avalanche Rated
HiPerFETTM Power MOSFETs ISOPLUS247TM
(Electrically Isolated Backside) Single MOSFET Die Avalanche Rated
Preliminary Data Sheet
Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL VISOL Weight 1.6 mm (0.063 in.) from case for 10 s 50/60 Hz, RMS t = 1 min Test |  IXYS Corporation | mosfet |
IXF Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | IXF18102 | 10Gbps Physical Layer Device product brief
Intel IXF18102
®
10Gbps Physical Layer Device for STS-192c/STM 64c POS/GFP
www.datasheet4u.com
Product Description The Intel® IXF18102 is a highly integrated framer solution for STS-192c/STM 64c port applications. The IXF18102 supports various modes of operation for transport of H  Intel Corporation data | | |
| 2 | IXF18104 | 10 Gigabit Lan PHY product brief
Intel IXF18104
®
10 Gigabit LAN PHY
www.datasheet4u.com
Product Overview The Intel® IXF18104 is a highly integrated solution for 10GbE Local Area Network (LAN) port applications compliant as per IEEE802.3ae specifications. The IXF18104 supports the 10GbE LAN mode of operation for Intel Corporation data | | |
| 3 | IXFA102N15T | Power MOSFET, Transistor Trench Gate Power MOSFET HiperFETTM
N-Channel Enhancement Mode Avalanche Rated
IXFA102N15T IXFH102N15T IXFP102N15T
VDSS ID25
RDS(on) trr
= 150V = 102A ≤ 18mΩ ≤ 120ns
TO-263 (IXFA)
G
S (TAB)
Symbol VDSS VDGR VGSS VGSM ID25 ILRMS IDM IA EAS dV/dt PD TJ TJM Tstg TL TSOLD Md FC
www.DataShee IXYS Corporation mosfet | | |
| 4 | IXFA10N60P | Polar MOSFETs Advance Technical Information
PolarHVTM HiPerFET Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
IXFA 10N60P IXFP 10N60P
VDSS = 600 V ID25 = 10 A RDS(on) ≤ 740 mΩ ≤ 250 ns trr
Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Ts IXYS Corporation mosfet | | |
| 5 | IXFA10N80P | Power MOSFET, Transistor PolarHVTM HiPerFET Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
TO-263 AA (IXFA)
IXFA10N80P IXFP10N80P IXFQ10N80P IXFH10N80P
TO-220AB (IXFP)
VDSS ID25 trr
RDS(on)
= 800V = 10A ≤ 1.1Ω ≤ 250ns
TO-3P (IXFQ)
G S D (TAB) G DS D (TAB)
G D S
D (TAB)
Symbol VDSS IXYS Corporation mosfet | | |
| 6 | IXFA110N15T2 | Power MOSFET, Transistor Preliminary Technical Information
TrenchT2TM HiperFET Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXFA110N15T2 IXFP110N15T2
VDSS ID25
RDS(on)
= 150V = 110A ≤ 13mΩ
TO-263
Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dV/dt PD TJ TJM Tstg TL Tsold Md Weight
www.DataSheet4U.net
Test IXYS Corporation mosfet | | |
| 7 | IXFA12N50P | Polar MOSFETs Advance Technical Information
IXFA 12N50P IXFP 12N50P
PolarHVTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXFA 12N50P IXFP 12N50P
VDSS ID25
RDS(on) trr
= 500 = 12 ≤ 0.5 ≤ 200
V A Ω ns
Symbol VDSS VDGR VGSM VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg IXYS Corporation mosfet | |
| Esta página es del resultado de búsqueda del IXFR34N80. Si pulsa el resultado de búsqueda de IXFR34N80 se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
nuevas actualizaciones
| Número de pieza | Descripción | Fabricantes | |
| SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
 Sanken |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap |