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Datasheet AOD419 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | AOD419 | P-Channel Enhancement Mode Field Effect Transistor
AOD419 P-Channel Enhancement Mode Field Effect Transistor
General Description
The AOD419 uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance. With the excellent thermal resistance of the DPAK package, this device is well suited f |  Alpha & Omega | transistor |
| 2 | AOD4191L | P-Channel Enhancement Mode Field Effect Transistor AOD4191L P-Channel Enhancement Mode Field Effect Transistor
General Description
The AOD4191 uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance. The device well suited for high current applications.
Features
VDS (V) = -40V ID = -34A RDS(ON) < 25mΩ |  Alpha & Omega Semiconductors | transistor |
AOD Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | AOD1N60 | 600V N-Channel MOSFET
AOD1N60 / AOU1N60 1.3A, 600V N-Channel MOSFET
formerly engineering part number AOD9600
General Description
The AOD1N60 has been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applic Alpha & Omega Semiconductors mosfet | | |
| 2 | AOD200 | N-Channel MOSFET AOD200
30V N-Channel MOSFET
General Description
The AOD200 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance.Power losses are minimized due to an extremely low combination of RDS(ON) and Crss.In addition,switching behavior is Alpha & Omega Semiconductors mosfet | | |
| 3 | AOD200 | N-Channel MOSFET AOD200
30V N-Channel MOSFET
General Description
The AOD200 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance.Power losses are minimized due to an extremely low combination of RDS(ON) and Crss.In addition,switching behavior is  Freescale mosfet | | |
| 4 | AOD208 | N-Channel MOSFET AOD208
30V N-Channel MOSFET
General Description
The AOD208 uses Trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Power losses are minimized due to an extremely low combination of RDS(ON) and Crss.In addition, switching behavior Alpha & Omega Semiconductors mosfet | | |
| 5 | AOD208 | N-Channel MOSFET AOD208
30V N-Channel MOSFET
General Description
The AOD208 uses Trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Power losses are minimized due to an extremely low combination of RDS(ON) and Crss.In addition, switching behavior i Freescale mosfet | | |
| 6 | AOD210 | N-Channel MOSFET AOD210
30V N-Channel MOSFET
General Description
The AOD210 uses Trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Power losses are minimized due to an extremely low combination of RDS(ON) and Crss.In addition, switching behavior Alpha & Omega Semiconductors mosfet | | |
| 7 | AOD210 | N-Channel MOSFET AOD210
30V N-Channel MOSFET
General Description
The AOD210 uses Trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Power losses are minimized due to an extremely low combination of RDS(ON) and Crss.In addition, switching behavior i Freescale mosfet | |
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