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PDF AOD456 Data sheet ( Hoja de datos )
| Número de pieza | AOD456 | |
| Descripción | N-Channel Enhancement Mode Field Effect Transistor | |
| Fabricantes | Alpha & Omega Semiconductors | |
| Logotipo |  |
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AOD456
N-Channel Enhancement Mode Field Effect Transistor
General Description
The AOD456 uses advanced trench technology and
design to provide excellent RDS(ON) with low gate
charge. This device is suitable for use in PWM, load
switching and general purpose applications. Standard
product AOD456 is Pb-free (meets ROHS & Sony
259 specifications). AOD456L is a Green Product
ordering option. AOD456 and AOD456L are
electrically identical.
TO-252
D-PAK
Features
VDS (V) = 25V
ID = 50A (VGS = 10V)
RDS(ON) <6 mΩ (VGS = 10V)
RDS(ON) <10 mΩ (VGS = 4.5V)
193
18
D
Top View
Drain Connected to
Tab
G
S
GD S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TC=25°C
Current G
TC=100°C
Pulsed Drain Current C
Avalanche Current C
Repetitive avalanche energy L=0.1mH C
ID
IDM
IAR
EAR
TC=25°C
Power Dissipation B TC=100°C
PD
TA=25°C
Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range TJ, TSTG
Maximum
25
±20
50
50
150
30
45
50
25
3
2.1
-55 to 175
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Case B
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJC
Typ
15
41
2.1
Max
20
50
3
Units
V
V
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
1 page  
AOD456
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
60
50
tA
=
L⋅ID
BV − VDD
40
30
20 TA=25°C
10
0.000001
0.00001
0.0001
0.001
Time in avalanche, tA (s)
Figure 12: Single Pulse Avalanche capability
60
50
60
50
40
30
20
10
0
0
50
40
4.63
494 593
692 830
25 50 T7C5ASE (°1C0)0 125 150
Figure 13: Power De-rating (Note B)
193
18
175
TA=25°C
40
30
30
20
20
10 10
0
0 25 50 75 100 125 150 175
TCASE (°C)
Figure 14: Current De-rating (Note B)
0
0.01
0.1
59
1 142 10
100 1000
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
10
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
0.01
0.001
0.00001
Single Pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=50°C/W
PD
Ton T
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
100
1000
Alpha & Omega Semiconductor, Ltd.
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet AOD456.PDF ] | |
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