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PDF MRF7S21170HSR3 Data sheet ( Hoja de datos )

Número de pieza MRF7S21170HSR3
Descripción RF Power Field Effect Transistors
Fabricantes Freescale Semiconductor 
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Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for CDMA base station applications with frequencies from 2110 to
2170 MHz. Suitable for CDMA and multicarrier amplifier applications. To be
used in Class AB and Class C for PCN - PCS/cellular radio and WLL
applications.
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PAR = 7.5 dB @ 0.01% Probability on CCDF.
Power Gain — 16 dB
Drain Efficiency — 31%
Device Output Signal PAR — 6.1 dB @ 0.01% Probability on CCDF
ACPR @ 5 MHz Offset — - 37 dBc in 3.84 MHz Channel Bandwidth
Capable of Handling 5:1 VSWR, @ 32 Vdc, 2140 MHz, 170 Watts CW
Peak Tuned Output Power
Pout @ 1 dB Compression Point w 170 Watts CW
Features
100% PAR Tested for Guaranteed Output Power Capability
Characterized with Series Equivalent Large - Signal Impedance Parameters
Internally Matched for Ease of Use
Integrated ESD Protection
Greater Negative Gate - Source Voltage Range for Improved Class C
Operation
Designed for Digital Predistortion Error Correction Systems
RoHS Compliant
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Document Number: MRF7S21170H
Rev. 3, 9/2006
MRF7S21170HR3
MRF7S21170HSR3
2110 - 2170 MHz, 50 W AVG., 28 V
SINGLE W - CDMA
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 465B - 03, STYLE 1
NI - 880
MRF7S21170HR3
CASE 465C - 02, STYLE 1
NI - 880S
MRF7S21170HSR3
Table 1. Maximum Ratings
Rating
Symbol
Value
Drain- Source Voltage
Gate- Source Voltage
Operating Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
Table 2. Thermal Characteristics
VDSS
VGS
VDD
Tstg
TC
TJ
- 0.5, +65
- 6.0, +10
32, +0
- 65 to +150
150
200
Characteristic
Symbol
Value (1,2)
Thermal Resistance, Junction to Case
Case Temperature 80°C, 170 W CW
Case Temperature 73°C, 25 W CW
RθJC
0.31
0.36
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access
the MTTF calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
Unit
Vdc
Vdc
Vdc
°C
°C
°C
Unit
°C/W
© Freescale Semiconductor, Inc., 2006. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF7S21170HR3 MRF7S21170HSR3
1

1 page




MRF7S21170HSR3 pdf
TYPICAL CHARACTERISTICS
17
16 Gps
36
34
15
14 ηD
13
IRL
12
VDD = 28 Vdc, Pout = 50 W (Avg.), IDQ = 1400 mA
Single−Carrier W−CDMA, 3.84 MHz Channel
Bandwidth, PAR = 7.5 dB @ 0.01% Probability (CCDF)
32
30
28
0
−5
−10
11
PARC
10
−1 −15
−2 −20
9 −3
2060 2080 2100 2120 2140 2160 2180 2200 2220
f, FREQUENCY (MHz)
Figure 3. Output Peak - to - Average Ratio Compression (PARC)
Broadband Performance @ Pout = 50 Watts Avg.
−25
17 44
16
Gps
15
42
40
14 ηD
13
IRL
12
VDD = 28 Vdc, Pout = 84 W (Avg.), IDQ = 1400 mA
Single−Carrier W−CDMA, 3.84 MHz Channel
Bandwidth, PAR = 7.5 dB @ 0.01% Probability (CCDF)
38
36
−2
−5
−10
11 −3 −15
10
PARC
−4
9 −5
2060 2080 2100 2120 2140 2160 2180 2200 2220
f, FREQUENCY (MHz)
Figure 4. Output Peak - to - Average Ratio Compression (PARC)
Broadband Performance @ Pout = 84 Watts Avg.
−20
−25
18
IDQ = 2100 mA
17
1750 mA
16 1400 mA
15 1050 mA
14 700 mA
13
1
VDD = 28 Vdc, f1 = 2135 MHz, f2 = 2145 MHz
Two−Tone Measurements, 10 MHz Tone Spacing
10 100
Pout, OUTPUT POWER (WATTS) PEP
Figure 5. Two - Tone Power Gain versus
Output Power
400
−10
VDD = 28 Vdc, f1 = 2135 MHz, f2 = 2145 MHz
Two−Tone Measurements, 10 MHz Tone Spacing
−20
−30
IDQ = 700 mA
−40
2100 mA
1400 mA
−50 1750 mA
−60
1
1050 mA
10
100 400
Pout, OUTPUT POWER (WATTS) PEP
Figure 6. Third Order Intermodulation Distortion
versus Output Power
RF Device Data
Freescale Semiconductor
MRF7S21170HR3 MRF7S21170HSR3
5

5 Page





MRF7S21170HSR3 arduino
PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process.
Application Notes
AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
EB212: Using Data Sheet Impedances for RF LDMOS Devices
REVISION HISTORY
The following table summarizes revisions to this document.
Date
May 2006
June 2006
Aug. 2006
Sept. 2006
Revision
Number
0
1
2
3
Description
Initial Release of Data Sheet
Added Class C to description of parts, pg. 1
Changeded “” to “ - ” in the Device Output Signal Par bullet, pg. 1
Changed typ value from ±9 to 18 in Part - to - Part Phase Variation characteristic description in
Table 4, Typical Performances
Expanded the characterization range in the MTTF Factor graph from 200_C to 230_C, Fig. 12
Added Greater Negative Source bullet to Features section
Corrected Fig. 14, Single - Carrier W - CDMA Spectrum, to 3.84 MHz
Changed “Capable of Handling” bullet from 10:1 VSWR @ 28 Vdc to 5:1 VSWR @ 32 Vdc,
pg. 1
Added “Insertion” to Part - to - Part Phase Variation characteristic description in Table 4, Typical
Performances
Added Gain Flatness, Group Delay and Deviation from Linear Phase characteristics to Table 4,
Typical Performances
Corrected Z6 value from “0.119” to “0.156”, corrected Z8 value from “0.156” to “0.119”,
corrected Z9 value from “0.770” to “0.077”, corrected Z11 value from “0.076” to “0.760”, Fig. 1,
Test Circuit Schematic
Added Part Number and Manufacturer for R1, R2 and R3 in Table 5, Test Circuit Component
Designations and Values
Added Figure 10, Digital Predistortion Correction
Corrected Fig. 15, Single - Carrier W - CDMA Spectrum, to correctly reflect integrated
bandwidth offsets
Added Figure 17, Pulsed CW Output Power versus Input Power @ 28 Vdc
Added Figure 18, Pulsed CW Output Power versus Input Power @ 32 Vdc
RF Device Data
Freescale Semiconductor
MRF7S21170HR3 MRF7S21170HSR3
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