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PDF IXFK52N60Q2 Data sheet ( Hoja de datos )

Número de pieza IXFK52N60Q2
Descripción (IXFK52N60Q2 / IXFX52N60Q2) Advanced Technical Information
Fabricantes IXYS Corporation 
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Advanced Technical Information
HiPerFETTM
Power MOSFETs
Q-Class
IXFK 52N60Q2
IXFX 52N60Q2
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low Qg
Low intrinsic Rg, low trr
VDSS
ID25
RDS(on)
=
=
=
600 V
52 A
115 m
trr 250 ns
Symbol
VVDDGSRS
VVGGSSM
IIDDM25
IAR
EAR
EAS
dv/dt
PD
TJ
TTJsMtg
TL
Md
Weight
Symbol
VDSS
VGS(th)
IGSS
IDSS
RDS(on)
Test Conditions
TTJJ
= 25°C to 150°C
= 25°C to 150°C; RGS = 1 M
Continuous
Transient
TTCC
= 25°C
= 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
TC = 25°C
IS IDM, di/dt 100 A/µs, VDD VDSS,
TJ 150°C, RG = 2
TC = 25°C
1.6 mm (0.063 in) from case for 10 s
Maximum Ratings
600 V
600 V
±30 V
±40 V
52 A
208 A
52 A
75 mJ
4.0 J
20 V/ns
735
-55 ... +150
150
-55 ... +150
300
W
°C
°C
°C
°C
Mounting torque
TO-264
0.9/6 Nm/lb.in.
PLUS-247
TO-264
6g
10 g
Test Conditions
Characteristic Values
(TJ
=
25°C,
unless otherwise specified)
min. typ. max.
VGS = 0 V, ID = 3mA
VDS = VGS, ID = 8 mA
VGS = ±30 VDC, VDS = 0
VVGDSS
=
=
0VDVSS
TTJJ
=
=
25°C
125°C
VPGuSlse=
10 V,
test, t
ID
3=000.5µs• ,IDd2u5 ty
cycle
d
2
%
600
2.0
V
4.5 V
±200 nA
50 µA
2 mA
115 m
PLUS 247TM (IXFX)
D (TAB)
G
D
TO-264 AA (IXFK)
G
D
S
D (TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Features
z Double metal process for low gate
resistance
z International standard packages
z Epoxy meet UL 94 V-0, flammability
classification
z Avalanche energy and current rated
z Fast intrinsic Rectifier
Advantages
z Easy to mount
z Space savings
z High power density
© 2003 IXYS All rights reserved
DS98982A(12/03)

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