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PDF LT3014 Data sheet ( Hoja de datos )
| Número de pieza | LT3014 | |
| Descripción | NPN SILICON RF POWER TRANSISTOR | |
| Fabricantes | Advanced Semiconductor | |
| Logotipo |  |
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LT3014
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI LT3014 is a Common
Emitter Device Designed for General
Purpose Class A and AB Amplifier
Applications up to 1.0 GHz.
FEATURES INCLUDE:
• Gold Metalization
• Emitter Ballasting
• High Gain
PACKAGE STYLE .280 4L STUD
MAXIMUM RATINGS
IC 300 mA
VCB
PDISS
TJ
T STG
θ JC
45 V
5.0 W @ TC = 25 OC
-55 OC to +200 OC
-55 OC to +200 OC
33.0 OC/W
1 = COLLECTOR
2 & 4 = EMITTER
3 = BASE
CHARACTERISTICS TC = 25 OC
SYMBOL
TEST CONDITIONS
BVCEO
IC = 10 mA
BVCES
VBE = 0 V
IC = 10 mA
BVEBO
IE = 1.0 mA
hFE
VCE = 5.0 V
IC = 100 mA
PG
VCE = 20 V
ICQ = 150 mA
f = 1.0 GHz
P1dB
VCE = 20 V
ICQ = 150 mA
f = 1.0 GHz
IP3
VCE = 20 V
ICQ = 150 mA
f = 1.0 GHz
POUT = 10 dBm (2 EQUAL TONES)
Cob VCB = 28 V
f = 1.0 MHz
ft
VCE = 20 V
ICQ = 150 mA
f = 1.0 GHz
NONE
MINIMUM TYPICAL MAXIMUM
22
50
3.5
20 200
3.0 3.5
27 29
48
2.0 3.0
3.0 3.5
UNITS
V
V
V
---
GHz
dBm
dBm
pF
GHz
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1
1 page | ||
| Páginas | Total 1 Páginas | |
| PDF Descargar | [ Datasheet LT3014.PDF ] | |
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