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PDF IRF640T Data sheet ( Hoja de datos )
| Número de pieza | IRF640T | |
| Descripción | N-CHANNEL POWER MOSFETS | |
| Fabricantes | ST Microelectronics | |
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IRF640T
N-channel 200V - 0.15Ω - 15A - TO-220
MESH OVERLAY™ Power MOSFET
General features
Type
VDSS
RDS(on)
IRF640T
200V <0.16Ω
■ Extremely high dv/dt capability
■ Gate charge minimized
■ Very low intrinsic capacitances
ID
15A
Description
This Power MOSFET is designed using the
company’s consolidated strip layout-based MESH
OVERLAY™ process. This technology matches
and improves the performances compared with
standard parts from various sources.
Applications
■ Switching application
3
2
1
TO-220
Internal schematic diagram
Order codes
Part number
IRF640T
October 2006
DataSheet4 U .com
Marking
IRF640T
Package
TO-220
Rev 1
Packaging
Tube
1/12
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IRF640T
Electrical characteristics
Table 6. Switching times
Symbol
Parameter
td(on)
tr
Turn-on delay time
Rise time
td(off)
tf
Turn-off delay time
Fall time
Test conditions
VDD=100 V, ID= 7.5A,
RG=4.7Ω, VGS=10V
(see Figure 13)
VDD = 100 V, ID = 7.5A,
RG = 4.7Ω, VGS = 10V
(see Figure 13)
Min. Typ. Max. Unit
11.5 ns
22 ns
19 ns
11 ns
Table 7. Source drain diode
Symbol
Parameter
Test conditions
ISD Source-drain current
ISDM(1) Source-drain current (pulsed)
VSD(2) Forward on voltage
ISD=15A, VGS=0
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD=15A, VDD=50V
di/dt = 100A/µs,
(see Figure 18)
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD=15A, VDD=50V
di/dt = 100A/µs,
Tj=150°C (see Figure 18)
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300µs, duty cycle 1.5%
Min Typ. Max Unit
15 A
60 A
1.6 V
125 ns
0.55 µC
8.8 A
148 ns
0.73 µC
9.9 A
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IRF640T
5 Revision history
Table 8. Revision history
Date
Revision
06-Oct-2006
1
First Release
Revision history
Changes
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Rev 1
11/12
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