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PDF SPN2302 Data sheet ( Hoja de datos )

Número de pieza SPN2302
Descripción N-Channel Enhancement Mode MOSFET
Fabricantes ETC 
Logotipo ETC Logotipo



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SPN2302
N-Channel Enhancement Mode MOSFET
DESCRIPTION
The SPN2302 is the N-Channel logic enhancement mode
power field effect transistors are produced using high cell
density , DMOS trench technology.
This high density process is especially tailored to
minimize on-state resistance.
These devices are particularly suited for low voltage
application such as cellular phone and notebook
computer power management and other battery powered
circuits, and low in-line power loss are needed in a very
small outline surface mount package.
APPLICATIONS
z Power Management in Note book
z Portable Equipment
z Battery Powered System
z DC/DC Converter
z Load Switch
z DSC
z LCD Display inverter
FEATURES
‹ 20V/3.6A,RDS(ON)= 80m@VGS=4.5V
‹ 20V/3.1A,RDS(ON)= 95m@VGS=2.5V
‹ Super high density cell design for extremely low
RDS (ON)
‹ Exceptional on-resistance and maximum DC
current capability
‹ SOT-23-3L package design
PIN CONFIGURATION(SOT-23-3L)
PART MARKING
2005/03/08 Ver.2
Page 1

1 page




SPN2302 pdf
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SPN2302
N-Channel Enhancement Mode MOSFET
TYPICAL CHARACTERISTICS
2005/03/08 Ver.2
Page 5

5 Page










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