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Número de pieza | HAF1009 | |
Descripción | Silicon P Channel MOS FET Series Power Switching | |
Fabricantes | Renesas Technology | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de HAF1009 (archivo pdf) en la parte inferior de esta página. Total 10 Páginas | ||
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HAF1009(L), HAF1009(S)
Silicon P Channel MOS FET Series Power Switching
REJ03G0029-0100Z
(Previous ADE-208-1525 (Z))
Rev.1.00
May.13.2003
Description
This FET has the over temperature shut–down capability sensing to the junction temperature. This FET has
the built–in over temperature shut–down circuit in the gate area. And this circuit operation to shut–down
the gate voltage in case of high junction temperature like applying over power consumption, over current
etc.
Features
• Logic level operation (-4 to -6 V Gate drive)
• High endurance capability against to the short circuit
• Built–in the over temperature shut–down circuit
• Latch type shut–down operation (Need 0 voltage recovery)
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Outline
LDPAK
2, 4
D
44
1
G Gate resistor
Tempe–
rature
sencing
circuit
Latch
circuit
Gate
shut–
down
circuit
S
3
1
2
3
1
2
3
1. Gate
2. Drain
3. Source
4. Drain
Rev.1.00, May.13.2003, page 1 of 10
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1 page www.DataSheet4U.com
HAF1009(L), HAF1009(S)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
-2.0
Pulse Test
-1.6
-1.2 I D = -40 A
-0.8
-20 A
-0.4
-10 A
0 -2 -4 -6 -8 -10
Gate to Source Voltage VGS (V)
Static Drain to Source Sate Resistance
vs. Drain Current
100
Pulse Test
50
VGS = -4 V
20 -10 V
10
5
2
1
-0.1 -0.5 -1
-5 -10
-50 -100
Drain Current ID (A)
Static
Drain
tovsS. oTuermcepeornatSutwraetwe Rwe.sDisatatnacSe heet4U.comForward
Transfer Admittance
Drain Current
vs.
100 100
Pulse Test
V DS = -10 V
50 Pulse Test
Tc = -25°C
80 20
60 I D = -40 A
VGS = -4 V
40
-20 A
-40 A
-10 A
20
VGS = -10 V
0
-20 A
-10 A
-25 0 25 50 75 100 125 150
Case Temperature Tc (°C)
10
5
2
1
0.5 75°C
25°C
0.2
0.1
-0.1
-1 -10
Drain Current ID (A)
-100
Rev.1.00, May.13.2003, page 5 of 10
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5 Page |
Páginas | Total 10 Páginas | |
PDF Descargar | [ Datasheet HAF1009.PDF ] |
Número de pieza | Descripción | Fabricantes |
HAF1001 | Silicon P Channel MOS FET Series Power Switching / Over Temperature Shut-down Capability | Hitachi Semiconductor |
HAF1002 | Silicon P Channel MOS FET Series Power Switching | Hitachi Semiconductor |
HAF1002L | Silicon P Channel MOS FET Series Power Switching | Hitachi Semiconductor |
HAF1002S | Silicon P Channel MOS FET Series Power Switching | Hitachi Semiconductor |
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