DataSheet.es    


PDF 2SA2118 Data sheet ( Hoja de datos )

Número de pieza 2SA2118
Descripción Power Transistors Silicon PNP epitaxial planar type
Fabricantes Panasonic Semiconductor 
Logotipo Panasonic Semiconductor Logotipo



Hay una vista previa y un enlace de descarga de 2SA2118 (archivo pdf) en la parte inferior de esta página.


Total 3 Páginas

No Preview Available ! 2SA2118 Hoja de datos, Descripción, Manual

www.DataSheet4U.com
Power Transistors
2SA2118
Silicon PNP epitaxial planar type
For power amplification
For TV vertical deflection output
Features
Satisfactory linearity of forward current transfer ratio hFE
Dielectric breakdown voltage of the package: 5 kV
Full-pack package which can be installed to the heat sink with one
screw.
Absolute Maximum Ratings TC = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power
dissipation
Junction temperature
Ta = 25°C
Storage temperature
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
200
V
180
V
6 V
2 A
3 A
25 W
2.0
DataSheet4U.com
150 °C
55 to +150 °C
9.9±0.3
Unit: mm
4.6±0.2
2.9±0.2
φ 3.2±0.1
1.4±0.2
1.6±0.2
0.8±0.1
2.6±0.1
0.55±0.15
2.54±0.30
5.08±0.50
123
1: Base
2: Collector
3: Emitter
TO-220D-A1 Package
DataShee
Electrical Characteristics TC = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-base voltage (Emitter open) VCBO IC = −50 µA, IE = 0
200
V
Collector-emitter voltage (Base open) VCEO IC = −5 mA, IB = 0
180
V
Emitter-base voltage (Collector open) VEBO IE = −500 µA, IC = 0
6
V
Base-emitter voltage
VBE VCE = −10 V, IC = −400 mA
1 V
Collector-base cutoff current (Emitter open) ICBO VCB = −200 V, IE = 0
50 µA
Emitter-base cutoff current (Collector open) IEBO VEB = −4 V, IC = 0
50 µA
Forward current transfer ratio
hFE1 * VCE = −10 V, IC = −150 mA
60 240
hFE2 VCE = −10 V, IC = −400 mA
50
Collector-emitter saturation voltage
VCE(sat) IC = −500 mA, IB = −50 mA
1 V
Transition frequency
fT VCE = −10 V, IC = − 0.5 A, f = 10 MHz
30
MHz
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
Q
P
hFE1
60 to 140
100 to 240
DataSheet4U.com
Publication date: July 2004
DataSheet4 U .com
SJD00315AED
1

1 page





PáginasTotal 3 Páginas
PDF Descargar[ Datasheet 2SA2118.PDF ]




Hoja de datos destacado

Número de piezaDescripciónFabricantes
2SA2112High Current Switching ApplicationsSanyo Semicon Device
Sanyo Semicon Device
2SA2112-50V, -3A, PNP Bipolar TransistorON Semiconductor
ON Semiconductor
2SA2113Medium power transistor ( 30V/2A)ROHM Semiconductor
ROHM Semiconductor
2SA2117PNP / NPN Epitaxial Planar Silicon TransistorsSanyo Semicon Device
Sanyo Semicon Device

Número de piezaDescripciónFabricantes
SLA6805M

High Voltage 3 phase Motor Driver IC.

Sanken
Sanken
SDC1742

12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters.

Analog Devices
Analog Devices


DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares,
permitiéndote verlos en linea o descargarlos en PDF.


DataSheet.es    |   2020   |  Privacy Policy  |  Contacto  |  Buscar